Heterogeneous integration of compound semiconductors

Annual Review of Materials Research

Volumn 40, Issue , 2010, Pages 469-500

  Moutanabbir, Oussama ^a   Gösele, Ulrich ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

defect engineering; direct wafer bonding; heterodevices; ion cut; thin layer and nanomembrane transfer

Indexed keywords

DEFECT ENGINEERING; DIRECT WAFER BONDING; HETERODEVICES; ION-CUT; THIN LAYER AND NANOMEMBRANE TRANSFER;

CRYSTALS; DEFECTS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; ION IMPLANTATION; LEAD COMPOUNDS; NANOSTRUCTURES; SEMICONDUCTOR GROWTH; SILICON WAFERS; THIN FILMS;

WAFER BONDING;

EID: 77956988478     PISSN: 15317331     EISSN: None     Source Type: Book Series    
DOI: 10.1146/annurev-matsci-070909-104448     Document Type: Article

References (186)

1. Arthur WB. 2009. The Nature of Technology: What It Is and How It Evolves. New York: Free Press
2. Deboeck J, Zou G, Vanrossum M, Borghs G. 1991. Mesa release and deposition used for GaAs-on-Si MESFET fabrication. Electron. Lett. 27:22-23
3. Shieh CL, Chi JY, Armiento CA, Haugsjaa PO, Negri A et al. 1991. 1.3μm InGaAsP ridge waveguide laser on GaAs and silicon substrates by thin-film transfer. Electron. Lett. 27:850-851
4. Camperiginestet C, Kim YW, Jokerst NM, Allen MG, Brooke MA. 1992. Vertical electrical interconnection of compound semiconductor thin-film devices to underlying silicon circuitry. IEEE Photon. Tech. Lett. 4:1003-1006
5. Ersen A, Schnitzer I, Yablonovitch E, Gmitter T. 1993. Direct bonding of GaAs films on silicon circuits by epitaxial liftoff. Electron. Lett. 36:1731-1739
6. Service RS. 2009. Is silicons reign nearing its end? Science 323:1000-1002
7. Steckl AJ, Park JH, Zavada JM. 2007. Prospects for rare earth doped GaN lasers on Si. Mater. Today 10:20-27
8. Fang AW, Park H, Kuo Y-H, Jones R, Cohen O et al. 2007. Hybrid silicon evanescent devices. Mater. Today 10:28-35
9. Roelkens G, Van Campenhout J, Brouckaert J, Van Thourhout D, Baets R et al. 2007. III-V/Si photonics by die-to-wafer bonding. Mater. Today 10:36-43
10. Ghani T, Armstrong M, Auth C, Bost M, Charvat P et al. 2003. A 90 nm high-volume manufacturing logic technology featuring novel 45 nm gate length strained silicon CMOS transistors. Int. Electron Devices Meet. Tech. Dig. 2003:978-980
11. Heyns M Tsai W (2009). Ultimate scaling of CMOS logic devices with Ge and III-V materials. MRS Bull. 34: 485-488.
12. Hudait MK, Dewey G, Datta S, Fastenau JM, Kavalieros J et al. 2007. Heterogeneous integration of enhancement mode In0.7Ga0.3As quantum well transistor on silicon substrate using thin (≥2μm) composite buffer architecture for high-speed and low-voltage (0.5V) logic applications. Int. Electron Devices Meet. 2007:625-628
13. Herrick KJ Kazior TE Laroche J Liu AWK Lubyshev D et al. (2008) Engineering substrates for 3D integration of III-V CMOS. ECS Trans. ; 16: 227-234.
14. Fitzgerald EA, Bulsara MT, Bai Y, Cheng C, Liu WK et al. 2009. Monolithic III-V/Si integration. ECS Trans. 19:345-350
15. Razeghi M, Defour M, Blondeau R, Omnes F, Maurel P et al. 1988. First CW operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate. Appl. Phys. Lett. 53:2389-2390
16. Bidnyk S, Little BD, Cho YH, Krasinski J, Song JJ et al. 1998. Laser action in GaN pyramids grown on (111) silicon by selective lateral overgrowth. Appl. Phys. Lett. 73:2242-2244
17. Yablonskii GP, Lutsenko EV, Pavlovskii VN, Zubialevich VZ, Gurskii AL et al. 2002. Luminescence and stimulated emission from GaN on silicon substrates heterostructures. Phys. Status Solid. A 192:54-59
18. Mi Z, Bhattacharya P, Yang J, Pipe KP. 2005. Room-temperature self-organised In0.5Ga0.5As quantum dot laser on silicon. Electron. Lett. 41:742-743
19. Seo S-W,Cho S-Y, JokerstNM. 2005.Athin-film laser, polymer waveguide, and thin-film photodetector cointegrated onto a silicon substrate. IEEE Photon. Technol. Lett. 17:2197-2199
20. Park JH, Steckl AJ. 2005. Demonstration of a visible laser on silicon using Eu-doped GaN thin films. J. Appl. Phys. 98:056108
21. Kwon O, Boeckl JJ, Lee ML, Pitera AJ, Fitzgerald EA et al. 2006. Monolithic integration of AlGaInP laser diodes on SiGe/Si substrates by molecular beam epitaxy. J. Appl. Phys. 100:013103
22. Fang AW, Park H, Cohen O, Jones R, Paniccia MJ et al. 2006. Electrically pumped hybrid AlGaInAssilicon evanescent laser. Opt. Express 14:9203-9210
23. Liang D, Fang AW, Oakley DC, Napoleone A, Chapman DC et al. 2008. 150 mm InP-to-silicon direct wafer bonding for silicon photonic integrated circuits. ECS Trans. 16:235-241
24. Patterson PR, Elliott K, Li JC, Royter Y, Hussain T. 2008. Integration of compound semiconductor devices and CMOS (CoSMOS) with die to wafer bonding. ECS Trans. 16:221-225
25. Chang-Chien P, Gutierrez-Aitken A, Sandhu R, Hennig K, Scott D et al. 2008. 3D wafer-scale integration for RF and digital applications. ECS Trans. 16:243-249
26. Ahn J-H Kim H-S Lee KJ Jeon S Kang SJ et al. (2006) Heterogeneous three-dimensional nanodevices. electronics by use of printed semiconductor nanomaterials. Science; 314: 1754-1757.
27. Menard E, Bower CA, Carr J, Rogers JA. 2007. Transfer printed heterogeneous integrated circuits. CS MANTECH Conf., Austin, Tex., pp. 203-205
28. Sun Y, Kim H-S, Menard E, Kim S, Adesida I et al. 2006. Printed arrays of aligned GaAs wires for flexible transistors, diodes, and circuits on plastic substrates. Small 2:1330-1334
29. Meitl MA, Zhu Z, Kumar V, Lee KJ, Feng X et al. 2006. Transfer printing by kinetic control of adhesion to an elastomeric stamp. Nat. Mater. 5:33-38
30. Park SI,Xiong YJ, Kim RH, Elvikis P, Meitl M et al. 2009. Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays. Science 325:977-981
31. Kang Y, Mages P, Clawson AR, Lau SS, Lo YH et al. 2001. Wafer-fused p-i-n InGaAs/Si photodiode with photogain. Appl. Phys. Lett. 79:970-972 (Pubitemid 33600585)
32. Chen P, Chen WV, Yu PKL, Tang CW, Lau KM et al. 2009. Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon. Appl. Phys. Lett. 94:012101
33. Bakkers EPAM, Borgstr̈om MT, Verheijen MA. 2007. Epitaxial growth of III-V nanowires on group IV substrates. MRS Bull. 32:117-122
34. Kasai S, Katagiri T, Takayanagi J, Kawase K, Ouchi T. 2009. Reduction of phonon resonant terahertz wave absorption in photoconductive switches using epitaxial layer transfer. Appl. Phys. Lett. 94:113505
35. Kasai S,Tanabashi A, Kajiki K, Itsuji T, Kurosaka R et al. 2009. Micro strip line-based on-chip terahertz integrated devices for high sensitivity biosensors. Appl. Phys. Express 2:062401
36. Levinshtein ME, Rumyantsev SL, Shur MS, eds. 2001. Properties of Advanced Semiconductor Materials. New York: Wiley
37. Markoç H. 2008. Handbook of Nitride Semiconductors and Devices. Vol.1: Materials Properties, Physics and Growth.Weinheim:Wiley-VCH
38. Levinshtein M, Rumyantsev S, Shur M, eds. 1996. Handbook Series on Semiconductor Parameters, Vol.1. Singapore: World Sci.
39. Yao T, Hong S-K, eds. 2009. Oxide and Nitride Semiconductors: Processing, Properties, and Applications. Berlin: Springer
40. Faber KT, Malloy K, eds. 1992. The Mechanical Properties of Semiconductors. London: Academic
41. Oda O. 2007. Compound Semiconductor Bulk Materials and Characterizations. Singapore: World Sci.
42. Becke H, Hall R, White J. 1965. Gallium arsenide MOS transistors. Solid-State Electron. 8:813-818
43. Becke HW, White JP. 1967. Gallium arsenide FETs outperform conventional silicon MOS devices. Electronics 40:82-85
44. Mimura T, Fukuta M. 1980. Status of the GaAs metal-oxide-semiconductor technology. IEEE Trans. Electron Devices 27:1147-1155
45. Yea PD. 2008. Main determinants for III-V metal-oxide-semiconductor field-effect transistors. J. Vac. Sci. Technol. A 26:697-704
46. Kobayashi T, Taira K, Nakamura F, Kawai H. 1989. Band lineup for a GaInP/GaAs heterojunction measured by a high-gain Npn heterojunction bipolar transistor grown by metalorganic chemical vapor deposition. J. Appl. Phys. 65:4898-4902
47. Schuppen A, Erben U, Gruhle A, Kibbel H, Schumacher H et al. 1995. Enhanced SiGe heterojunction bipolar transistors with 160GHz-fmax. Int. Electron Devices Meet. 1995:743-746
48. Nguyen C, Liu T, Chen M, Sun H-C, Rensch D. 1995. AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications. Int. Electron Devices Meet. 1995:799-802
49. Bhat R, Hong W-P, Caneau C, Koza MA, Nguyen C-K et al. 1996. InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon-doped base grown by organometallic chemical vapor deposition. Appl. Phys. Lett. 68:985-987
50. Han J, Baca AG, Shul RJ, Willison CG, Zhang L et al. 1999. Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor. Appl. Phys. Lett. 74:2702-2704
51. Yuan JS. 1999. SiGe, GaAs, and InP Heterojunction Bipolar Transistors. New York:Wiley
52. Khan MA, Bhattarai A, Kuznia JN, Olson DT. 1993. High electron mobility transistor based on a GaN-AlxGa1?xN heterojunction. Appl. Phys. Lett. 63:1214-1215
53. Kim D-H, del Alamo J. 2007. Logic performance of 40nm InAs HEMTs. Int. Electron Devices Meet. 2007:629-632
54. Datta S, AshleyT, Brask J, Buckle L, Doczy M et al. 2005. 85 nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications. Int. Electron Devices Meet. 2005:783-786
55. Ashley T, Buckle L, Datta S, Emeny MT, Hayes DG et al. 2007. Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications. Electron. Lett. 43:777-779
56. Canham LT. 1990. Silicon quantum array fabrication by electrochemical chemical dissolution of wafers. Appl. Phys. Lett. 57:1046-1048
57. LehmannV,G̈oseleU. 1991. Porous silicon formation: a quantum wire effect. Appl. Phys. Lett. 58:656-658
58. Pavesi L. 2003. Will silicon be the photonic material of the third millenium? J. Phys. Condens. Matter 15:R1169-96
59. Boyraz O, Jalali B. 2004. Demonstration of a silicon Raman laser. Opt. Express 12:5269-5273
60. Rong H, Liu A, Jones R, Cohen O, Hak D et al. 2005. An all-silicon Raman laser. Nature 433:292-294
61. Rong H, Kuo Y-H, Xu S, Liu A, Jones R et al. 2006. Monolithic integrated Raman silicon laser. Opt. Exp. 14:6705-6712 (Pubitemid 44118109)
62. Park H, Fang AW, Cohen O, Jones R, Paniccia MJ et al. 2007. A hybrid AlGaInAs-silicon evanescent amplifier. IEEE Photon. Technol. Lett. 19:230-232
63. Park H, Kuo YH, Fang AW, Jones R, Cohen O et al. 2007. Hybrid AlGaInAs-silicon evanescent preamplifier and photodetector. Opt. Exp. 5:13539-13546 (Pubitemid 47608564)
64. Tsybeskov L, Lockwood DJ. 2009. Silicon-germanium nanostructures for light emitters and on-chip optical interconnects. Proc. IEEE 97:1284-1303
65. Wanlass WM, Ward JS, Emery KA, Al-Jassim MM, Jones KM et al. 1996. GaxIn1?xAs thermophotovoltaic converters. Sol. Energy Mater. Sol. Cells 41:405-417
66. Kurtz SR, Allerman AA, Jones ED, Gee JM, Banas JJ et al. 1999. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs. Appl. Phys. Lett. 74:729-731
67. Dahal R, Pantha B, Li J, Lin JY, Jiang HX. 2009. InGaN/GaN multiple quantum well solar cells with long operating wavelengths. Appl. Phys. Lett. 94:063505
68. Fontcuberta i Morral A, Zahler JM, AtwaterHA, Ahrenkiel SP, Wanlass MW. 2003. InGaAs/InP double heterostructures on InP/Si templates fabricated by wafer bonding and hydrogen-induced exfoliation. Appl. Phys. Lett. 83:5413-5415
69. Tanabe K, Fontcuberta i Morral A, Atwater HA, Aiken DJ, Wanlass MW. 2006. Direct-bonded GaAs/InGaAs tandem solar cell. Appl. Phys. Lett. 89:102106
70. Zahler JM Ladous C Pinnington T Newman FD Atwater HA (2007) High efficiency InGaAs solar cells on Si by InP layer transfer. Appl. Phys. Lett.; 91: 012108.
71. Kang BS, Ren F, Wang L, Lofton C, Tan WHW et al. 2005. Electrical detection of immobilized proteins with ungated AlGaN/GaN high-electron-mobility transistors. Appl. Phys. Lett. 87:023508
72. Kang BS, Pearton SJ, Chen JJ, Ren F, Johnson JW et al. 2006. Electrical detection of deoxyribonucleic acid hybridization with AlGaN/GaN high electron mobility transistors. Appl. Phys. Lett. 89:122102
73. Kang BS,Wang HT, Ren F, Pearton SJ. 2008. Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors. J. Appl. Phys. 104:031101
74. Wolf SA, Awschalom DD, Buhrman RA, Daughton JM, von Molńar S et al. 2001. Spintronics: a spinbased electronics vision for the future. Science 294:1488-1495
75. De Boeck J, Van Roy W, Das J, Motsnyi V, Liu Z et al. 2002. Technology and materials issues in semiconductor-based magnetoelectronics. Semicond. Sci. Technol. 17:342-354
76. Demeester P, Ackaert A, Coudenys G, Moerman I, Buydens L et al. 1991. Relaxed lattice-mismatched growth of III-V semiconductors. Prog. Cryst. Growth Charact. Mater. 22:53-141
77. AkiyamaM, Kawarada Y, Kaminishi K. 1984. Growth of single domain GaAs layer on (100)-oriented Si substrate by MOCVD. Jpn. J. Appl. Phys. 23:L843-45
78. Ueda T, Nishi S, Kawarada Y, Akiyama M, Kaminishi K. 1986. Effects of the substrate offset angle on the growth of GaAs on Si substrate. Jpn. J. Appl. Phys. 25:L789-91
79. Kim YH, Lee JY, Noh YG, KimMD, Kwon YJ et al. 2006. Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: a transmission electron microscopy study. Appl. Phys. Lett. 89:031919
80. Tausch FW Jr, Lapierre AG III. 1965. A novel crystal growth phenomenon: single crystal GaAs overgrowth onto silicon dioxide. J. Electrochem. Soc. 112:706-709
81. McClelland RW, Bozler CO, Fan JCC. 1980. A technique for producing epitaxial films on reuseable substrates. Appl. Phys. Lett. 37:560-562
82. Shichijo M, Nakane R, Sugahara S, Takagi S. 2007. Fabrication of III-V on insulator structures on Si using microchannel epitaxy with a two-step growth technique. Jpn. J. Appl. Phys. 46:5930-5934
83. Tanoto H, Yoon SF, LokeWK, Chen KP, Fitzgerald EA et al. 2008. Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy. J. Appl. Phys. 103:104901
84. Choi D, Kim E,McIntyre PC, Harris JS. 2008. Molecular-beam epitaxy growth of III-V semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication. Appl. Phys. Lett. 92:203502
85. Nakaharai S, Tezuka T, Sugiyama N, Moriyama Y, Takagi S. 2003. Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique. Appl. Phys. Lett. 83:3516-3518
86. Wagner RS, Ellis WC. 1964. Vapor-liquid-solid mechanism of single crystal growth. Appl. Phys. Lett. 4:89-90
87. Yazawa M, Koguchi M, Hiruma K. 1991. Heteroepitaxial ultrafine wire-like growth of InAs on GaAs substrates. Appl. Phys. Lett. 58:1080-1082
88. Hiruma K, Yazawa M, Katsuyama T, Ogawa K, Haraguchi K. 1995. Growth and optical properties of nanometer-scale GaAs and InAs whiskers. J. Appl. Phys. 77:447-462
89. Martensson T, Svensson CPT, Wacaser BA, Larsson MW, Seifert W et al. 2004. Epitaxial III-V nanowires on silicon. Nano Lett. 4:1987-1990
90. Chuang LC, Moewe M, Chase C, Kobayashi NP, Chang-Hasnain C. 2007. Critical diameter for III-V nanowires grown on lattice-mismatched substrates. Appl. Phys. Lett. 90:043115
91. Yi SS, GirolamiG, Amano J, Islam MS, Sharma S et al. 2006. InP nanobridges epitaxially formed between two vertical Si surfaces by metal-catalyzed chemical vapor deposition. Appl. Phys. Lett. 89:133121
92. G̈osele U, Tong QY. 1998. Semiconductor wafer bonding. Annu. Rev. Mater. Sci. 28:215-241
93. Tong QY, G̈osele U. 1999. Semiconductor Wafer Bonding: Science and Technology. New York:Wiley
94. Haisma J, Spierings GACM. 2002. Contact bonding, including direct-bonding in a historical and recent context of materials science and technology, physics and chemistry: historical review in a broader scope and comparative outlook. Mater. Sci. Eng. R 37:1-60
95. Alexe M, G̈osele U, eds. 2004. Wafer Bonding: Applications and Technology. Berlin: Springer-Verlag
96. Christiansen SH, Singh R, G̈osele U. 2006. Wafer direct bonding: from advanced substrate engineering to future applications in micro/nanoelectronics. Proc. IEEE 94:1-46
97. Knechtel R. 2005. Glass frit bonding: an universal technology forwafer level encapsulation and packaging. Microsyst. Technol. 12:63-68
98. Niklaus F, Stemme G, Lu J-Q, Gutmann RJ. 2006. Adhesive wafer bonding. J. Appl. Phys. 99:031101
99. Wallis G, Daniel IP. 1969. Field assisted glass-metal sealing. J. Appl. Phys. 40:3946-3949
100. Lehmann V, Mitani K, Stengl R, Mii T, G̈osele U. 1989. Bubble-free wafer bonding of GaAs and InP on silicon in a microcleanroom. Jpn. J. Appl. Phys. 28:L2141-43
101. Yu SL, Mages P, Qiao D, Jia L, Yu PKL et al. 2003. Photocurrent method for characterizing the interface of hydrophobically bonded Si wafers. Appl. Phys. Lett. 82:916-918
102. Fecioru AM. 2006. Low temperature UHV bonding with laser precleaning. PhD thesis.Martin-Luther-Univ. Halle-Wittenberg. 101 pp.
103. Kim MJ, Carpenter RW. 2003. Heterogeneous silicon integration by ultrahigh vacuum wafer bonding. J. Electron. Mater. 32:849-854
104. Pasquariello D, CamachoM, Ericsson F,Hjort K. 2001. Crystalline defects in InP-to-silicon direct wafer bonding. Jpn. J. Appl. Phys. 40:4837-4844
105. Liang D, Bowers JE. 2008. Highly efficient vertical outgassing channels for low-temperature InP-tosilicon direct wafer bonding on the silicon-on-insulator substrate. J. Vac. Sci. Technol. B 26:1560-1568
106. Tong QY, Gan Q, Hudson G, Fountain G, Enquist P. 2004. Low temperature InP/Si wafer bonding. Appl. Phys. Lett. 84:732-734
107. AlexeM,Dragoi V, ReicheM,G̈oseleU. 2000. Low temperatureGaAs/Si direct wafer bonding. Electron. Lett. 36:677-678
108. Katsnelson A, Tokramov V, YakimovM, LambertiM,Oktyabrasky S. 2003. Hybrid integration of III-V optoelectronic devices on Si platform using BCB. Mater. Res. Soc. Symp. Proc. 741:123-128
109. Moutanabbir O, Senz S, Scholz R, Christiansen S, Avramescu A et al. 2009. Stress adjustment and bonding of H-implanted 2-in. freestandingGaNwafer: the concept of double-sided splitting. Electrochem. Solid-State Lett. 14:H105-8
110. Tan CS, Fan A, Chen KN, Reif R. 2003. Low-temperature thermal oxide to plasma-enhanced chemical vapor deposition oxide wafer bonding for thin-layer transfer. Appl. Phys. Lett. 82:2649-2651
111. Schmid-Fetzer R. 1995. Fundamentals of bonding by isothermal solidification for high temperature semiconductor applications. In Design Fundamentals of High Temperature Composites, Intermetallics, and Metal-Ceramics Systems, ed. Lin RY, Chang YA, Reddy RG, Liu CT, pp. 75-99. Warrendale, PA: Miner. Met. Mater. Soc.
112. Bickford J, Lau SS, Yu PKL. 2008. GaAs/Si metal waferbonding for heterogeneous integrated circuits. Int. Conf. Solid-State Integrated-Circuit Technol., 9th, Beijing, China, pp. 1180-1183
113. Hung Q-A, Lu S-J, Tong Q-Y. 1989. Gallium arsenide on insulator by electrostatic bonding. 1989 IEEE SOS/SOI Technol. Conf., pp. 62-63
114. Liang D, Bowers JE. 2009. Photonic integration: Si or InP? Electron. Lett. 45:578-581
115. Wang CA, Shiau DA, Murphy PG, OBrian PW, Huang RK et al. 2004. Wafer bonding and epitaxial transfer of GaSb-based epitaxy to GaAs for monolithic interconnection of thermophotovoltaic devices. J. Electron. Mater. 33:213-217
116. Yonehara T, Sakaguchi K, Sato N. 1994. Epitaxial layer transfer by bond and etch back of porous Si. Appl. Phys. Lett. 64:2108-2110
117. Yonehara T, Sakaguchi K. 2001. ELTRANR novel SOI wafer technology. JSAP Int. 4:10-16
118. F̈oll H, Carstensen J, Langa S, Christophersen M, Tiginyanu IM. 2003. Porous III-V compound semiconductors: formation, properties, and comparison to silicon. Phys. Status Solid. A 197:61-70
119. Buzynin AN, Buzynin YN, Belyaev AV, Lukyanov AE, Rau EI. 2007. Growth and defects of GaAs and InGaAs films on porous GaAs substrates. Thin Solid Films 515:4445-4449
120. Konagai M, Sugimoto M, Takahashi K. 1978. High efficiency GaAs thin film solar cells by peeled film technology. J. Cryst. Growth 45:277-280
121. Yablonovitch E, Gmitter T, Harbison JP, Bhat R. 1987. Extreme selectivity in the lift-off of epitaxial GaAs films. Appl. Phys. Lett. 51:2222-2224
122. Bruel M. 1995. Silicon on-insulator material technology. Electron. Lett. 31:1201-1202
123. Deguet C, Sanchez L, Akatsu T, Allibert F, Dechamp J et al. 2006. Fabrication and characterization of 200 mm germanium-on-insulator (GeOI) substrates made from bulk germanium. Electron. Lett. 42:415-417
124. Chao Y-L, Scholz R, ReicheM, G̈osele U,Woo JCS. 2006. Characteristics of germanium-on-insulators fabricated by wafer bonding and hydrogen-induced layer splitting. Jpn. J. Appl. Phys. 45:8665-8670
125. Radu I, Szafraniak I, Scholz R, AlexeM, G̈osele U. 2002. Ferroelectric oxide single-crystalline layers by wafer bonding and hydrogen/helium implantation. Mater. Res. Soc. Symp. Proc. 748:U1181-86
126. Ruglovsky JL, Park YB, Ryan CB, Atwater HA. 2002. Wafer bonding and layer transfer for thin film ferroelectrics. Mater. Res. Soc. Symp. Proc. 748:U11-16
127. Rabiei P, Gunter P. 2004. Optical and electro-optical properties of submicrometer lithium niobate slab waveguides prepared by crystal ion slicing and wafer bonding. Appl. Phys. Lett. 85:4603-4605
128. Levy M, Osgood RM Jr, Liu R, Cross LE, Cargill GS III et al. 1998. Fabrication of single-crystal lithium niobate films by crystal ion slicing. Appl. Phys. Lett. 73:2293-2295
129. Levy M, Ghimire S, Bandyopadhyay AK, Hong YK, Moon K et al. 2002. PZN-PT single-crystal thin film monomorph actuator. Ferroelectr. Lett. Sect. 29: 29-40
130. Chen F. 2009. Photonic guiding structures in lithium niobate crystals produced by energetic ion beams. J. Appl. Phys. 106:081101
131. Schrempel F, Gischkat T, Hartung H, Ḧoche T, Kley E-B et al. Ultrathin membranes in x-cut lithium niobate. Opt. Lett. 34:1426-1428
132. Current MI, Liu W, Roth IS, Lamm AJ, En WG et al. 2001. A plasma immersion implantation system for materials modification. Surf. Coat. Technol. 136:138-141
133. Terreault B (2007) Hydrogen blistering of silicon: progress in fundamental understanding. Phys. Status Solid. A; 204: 2129-2184.
134. Zahler JM, Fontcuberta i Morral A, Griggs MJ, Atwater HA, Chabal YJ. 2007. Role of hydrogen in hydrogen-induced layer exfoliation of germanium. Phys. Rev. B 75:035309
135. David M-L, Pizzagalli L, Pailloux F, Barbot JF. 2009. Atomic scale structure of (001) hydrogen-induced platelets in germanium. Phys. Rev. Lett. 102:155504
136. Fontcuberta i Morral A, Zahler JM, Griggs MJ, Atwater HA, Chabal YJ. 2005. Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP. Phys. Rev. B 72:085219
137. Chen P, Di Z, Nastasi M, Bruno E, Grimaldi MG et al. 2008. Effects of hydrogen implantation temperature on InP surface blistering. Appl. Phys. Lett. 92:202107
138. Hayashi S, Goorsky M, Noori A, Bruno D. 2006 . Materials issues for the heterogeneous integration of III-V compounds. J. Electrochem. Soc. 153:G1011
139. Moutanabbir O, Scholz R, Senz S, G̈osele U, Chicoine M et al. 2008. Microstructural evolution in H ion induced splitting of freestanding GaN. Appl. Phys. Lett. 93:031916
140. Moutanabbir O, Chabal YJ, Chicoine M, Christiansen S, Krause-Rehberg R et al. 2009. Mechanisms of ion-induced GaN thin layer splitting. Nucl. Instrum. Methods B 267:1264-1268
141. Weng X, Ye W, Goldman RS, Mabon JC. 2004. Formation and blistering of GaAsN nanostructure layers. J. Vac. Sci. Technol. B 22:989-992
142. Collino RR, Dick BB, Naab F, Wang YQ, ThoulessMD et al. 2009. Blister formation in ion-implanted GaAs: role of diffusivity. Appl. Phys. Lett. 95:111912
143. Reutov VF, Ibragimov SS. 1983. Method for fabricating thin silicon wafers. USSR Inventors Certif. No.1282757
144. Henley F, Lamm A, Kang S, Liu Z, Tian L. 2008. Direct film transfer (DFT) technology for kerf-free silicon wafering. Eur. Photovoltaic Solar Energy, 23rd, Valencia, 2BO.2.3
145. Primak W. 1963. Radiation-induced cavities and exfoliation. J. Appl. Phys. 34:3630-3631
146. Cerofolini GF, Corni F, Frabboni S, Nobili C, Ottaviani G et al. 2000. Hydrogen and helium bubbles in silicon. Mater. Sci. Eng. R 27:1-52
147. Weldon MK, Marsico VE, Chabal YJ, Agarwal A, Eaglesham DJ et al. 1997. On the mechanism of the hydrogen-induced exfoliation of silicon. J. Vac. Sci. Technol. B 5:1065-1073
148. Weldon MK, CollotM, Chabal YJ, Venezia VC, Agarwal A et al. 1998. Mechanism of silicon exfoliation induced by hydrogen/helium coimplantation. Appl. Phys. Lett. 73:3721-3723
149. Chabal YJ, Weldon MK, Caudano Y, Stefanov BB, Raghavachari K. 1999. Spectroscopic studies of H-decorated interstitials and vacancies in thin-film silicon exfoliation. Physica B 273-274:152-163
150. MoutanabbirO,Terreault B. 2004. Raman-scattering elucidation of the giant isotope effect in hydrogenion blistering of silicon. J. Chem. Phys. 121:7973-7986
151. Weber J, Fisher T, Hieckmann E, Hiller M, Lavrov EV. 2005. Properties of hydrogen induced voids in silicon. J. Phys. Condens. Matter 17:S2303-14
152. Moutanabbir O, Terreault B. 2005. Effects in synergistic blistering of silicon by coimplantation of H, D, and He ions. Appl. Phys. Lett. 86:051906
153. Nguyen P, Cayrefourcq I, Bourdelle KK, Boussagol A, Guiot E et al. 2005. Mechanism of the Smart CutTM layer transfer in silicon by hydrogen and helium coimplantation in the medium dose range. J. Appl. Phys. 97:083527
154. Ḧochbauer T, MisraA,NastasiM,Mayer JW.2002. Physical mechanisms behind the ion-cut in hydrogen implanted silicon. J. Appl. Phys. 92:2335-2342
155. Moutanabbir O, Terreault B, Chicoine M, Schiettekatte F, Simpson PJ. 2007. Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon. Phys. Rev. B 75:075201
156. Di ZF,Wang YQ, Nastasi M, Shao L, Lee JK et al. 2008. Evidence for ion irradiation induced dissociation and reconstruction of Si-H bonds in hydrogen-implanted silicon. Appl. Phys. Lett. 93:104103
157. NastasiM,Ḧochbauer T, Lee J-K,Hirth JP, Ridgway M et al. 2005. Nucleation and growth of platelets in hydrogen-ion-implanted silicon. Appl. Phys. Lett. 86:154102
158. Lee J-K, Lin Y, Jia QX, Ḧochbauer T, Jung HS et al. 2006. Role of strain in the blistering of hydrogenimplanted silicon. Appl. Phys. Lett. 89:101901
159. Sousbie N, Capello N, Eymery J, Rieutord F, Lagah́e C. 2006. X-ray scattering study of hydrogen implantation in silicon. J. Appl. Phys. 99:103509
160. Simpson PJ, Knights AP, Chicoine M, Dudeck K, Moutanabbir O et al. 2008. Thermal evolution of defects produced by implantation of H, D and He in silicon. Appl. Surf. Sci. 255:63-67
161. Woo HJ, Choi HW, Kim GD, Kim JK, Kim KJ. 2009. Blistering/exfoliation kinetics of GaAs by hydrogen and helium implantations. Surf. Coat. Technol. 203:2370-2374
162. Tong Q-Y, G̈osele U. 1999. Wafer bonding and layer splitting formicrosystems. Adv. Mater. 11:1409-1425
163. Hayashi S, Bruno D, Goorsky MS. 2004. Temperature dependence of hydrogen-induced exfoliation of InP. Appl. Phys. Lett. 85:236-238
164. Jalaguier E, Aspar B, Pocas S, Michaud JF, Zussy M et al. Transfer of 3 in GaAs film on silicon substrate by proton implantation process. Electron. Lett. 34:408-409
165. Tong Q-Y, Chao Y-L, Huang LJ, G̈osele U. 1999. Low temperature InP layer transfer. Electron. Lett. 35:341-342
166. Di Cioccio L Jalaguier E Letertre F (2005) III-V layer transfer onto silicon and applications. Phys. Status Solid. A; 202: 509-515.
167. Singh R, Radu I, Scholz R, Himcinschi C, G̈osele U et al. 2006. Low temperature InP layer transfer onto Si by helium implantation and direct wafer bonding. Semicond. Sci. Technol. 21:1311-1314
168. Moutanabbir O, Christiansen S, Senz S, Scholz R, Petzold M et al. 2008. III-V and III-nitride engineered heterostructures: wafer bonding, ion slicing and more. ECS Trans. 16:251-262
169. Chen W, Chen P, Jing Y, Lau SS, Kuech TF et al. 2007. Double-flip transfer of indium phosphide layers via adhesive wafer bonding and ion-cutting process. Appl. Phys. Lett. 90:052114
170. Joshi MB, Hayashi SL, Goorsky MS. 2008. Fabrication of transfer-enhanced semiconductor substrates by wafer bonding and hydrogen exfoliation techniques. Electrochem. Solid State Lett. 11:H236-39
171. Radu I. 2003. Layer transfer of semiconductors and complex oxides by helium and/or hydrogen implantation and wafer bonding. PhD thesis. Martin-Luther-Univ. Halle-Wittenberg. 99 pp.
172. ReicheM,Himcinschi C,G̈oseleU,Christiansen SH, Mantl S et al. 2007. Strained silicon-on-insulator: fabrication and characterization. ECS Trans. 6:339-344
173. Bhattacharya RS, He P, Xu Y, Goorsky M. 2008. Ion beam layer separation of cadmium zinc telluride. AIP Conf. Proc. 1066:221-224
174. Park SS, Park I-W, Park SH. 2000. Free-standing GaN substrates by hydride vapor phase epitaxy. Jpn. J. Appl. Phys. 39:L1141-42
175. YoshidaT, OshimaY,Eri T, Watanabe K, Shibata M et al. 2008. Preparation of 3 inch freestandingGaN substrates by hydride vapor phase epitaxy with void-assisted separation. Phys. Status Solid. A 205:1053-1055
176. Kopperschmidt P, K̈astner G, Hesse D, Zakharov ND, G̈osele U. 1997. High bond energy and thermomechanical stress in silicon and sapphire wafer bonding. Appl. Phys. Lett. 70:2972-2974
177. Moutanabbir O, G̈osele U. 2010. Bulk GaN ion cleaving. J. Electron. Mater. 39:482-488
178. Kucheyev SO Williams JS Pearson SJ (2001) Ion implantation into GaN. Mater. Sci. Eng. R; 33: 51-108.
179. Kucheyev SO,Williams JS, Jagadish C, Zou J, Li G. 2001. Blistering of H-implantedGaN. J. Appl. Phys. 91:3928-3930
180. Radu I, Singh R, Scholz R, G̈osele U, Christiansen S et al. 2006. Formation of nanovoids in high-dose hydrogen implanted GaN. Appl. Phys. Lett. 89:031912
181. Singh R, Radu I, G̈osele U, Christiansen SH. 2006. Investigation of hydrogen implantation induced blistering in GaN. Phys. Status Solid. C 3:1754-1757 (Pubitemid 44115828)
182. Woo HJ, Choi HW, Hong W, Park JH, Eum CH. 2009. Blistering kinetics of GaN by hydrogen implantation at high temperature. Surf. Coat. Technol. 203:2375-2379
183. Moutanabbir O, Scholz R, G̈osele U, Terreault B. 2009. Facile synthesis of highly stable a-Si by ion implantation of low-keV H isotopes. Phys. Rev. B 79:233202
184. Moutanabbir O, Terreault B. 2005. Effects in synergistic blistering of silicon by coimplantation of H, D, and He ions. Appl. Phys. Lett. 86:051906
185. Weinstein MG, Song CY, Stavola M, Pearton SJ, Wilson RG et al. 1998. Hydrogen-decorated lattice defects in proton implanted GaN. Appl. Phys. Lett. 72:1703-1705
186. Moutanabbir O, Scholz R, G̈osele U, Guittoum A, Jungmann M et al. 2010. Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN. Phys. Rev. B 81:115205 500 Moutanabbir