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Volumn 94, Issue 1, 2009, Pages

Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon

(9) Chen, Peng a,b Chen, Winnie V a Yu, Paul K L a Tang, Chak Wah b Lau, Kei May b Mawst, Luke c Paulson, Charles c Kuech, T F c Lau, S S a

a UNIVERSITY OF CALIFORNIA (United States)

b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

c University of Wisconsin Madison (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN;

CHEMICAL ETCHINGS; DEVICE PROCESSING; DEVICE TRANSFERS; GROWN SAMPLES; HYDROGEN IMPLANTATIONS; ION CUTS; LAYER TRANSFER PROCESSES; MINORITY CARRIERS; PHOTOINDUCED CURRENTS; REVERSE BIASES; SI SUBSTRATES; SURFACE FLATNESSES;

PHOTODIODES;

EID: 58149504133 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3062848 Document Type: Article

Times cited : (10)

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