Growth and fabrication of GaN/AIGaN heterojunction bipolar transistor

Applied Physics Letters

Volumn 74, Issue 18, 1999, Pages 2702-2704

  Han, J ^a   Baca, A G ^a   Shul, R J ^a   Willison, C G ^a   Zhang, L ^a   Ren, F ^b   Zhang, A P ^b   Dang, G T ^b   Donovan, S M ^b   Cao, X A ^b   Cho, H ^b   Jung, K B ^b   Abernathy, C R ^b   Pearton, S J ^b   Wilson, R G ^c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b University of Florida   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

IONIZATION OF SOLIDS; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM NITRIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032614607     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123942     Document Type: Article

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