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Japanese journal of applied physics

Volumn 39, Issue 11 B, 2000, Pages

Free-standing GaN substrates by hydride vapor phase epitaxy

(3) Park, Sung S a,b Park, Il W b Choh, Sung H b

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

b Korea University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRACKS; DISLOCATIONS (CRYSTALS); HYDRIDES; LASER APPLICATIONS; NITRIDES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN; VAPOR PHASE EPITAXY;

GALLIUM NITRIDES; HYDRIDE VAPOR PHASE EPITAXY; SAPPHIRE WAFERS; THREADING DISLOCATIONS;

SEMICONDUCTING FILMS;

EID: 0034318573 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.l1141 Document Type: Article

Times cited : (168)

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