150 mm inp-to-silicon direct wafer bonding for silicon photonic integrated circuits

ECS Transactions

Volumn 16, Issue 8, 2009, Pages 235-241

  Liang, D ^a   Fang, A W ^a   Oakley, D C ^b   Napoleone, A ^b   Chapman, D C ^b   Chen, C L ^b   Juodawlkis, P W ^b   Raday, O ^c   Bowers, J E ^a  

^a University of California   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c INTEL CORPORATION   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; PHOTONIC DEVICES; PHOTONIC INTEGRATION TECHNOLOGY; QUANTUM WELL LASERS; RING LASERS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS; SILICON ON INSULATOR TECHNOLOGY; SILICON PHOTONICS; SILICON WAFERS; TEMPERATURE; TIMING CIRCUITS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

BONDING INTERFACES; DIRECT WAFER BONDING; EPITAXIAL STRUCTURE; HIGH RESOLUTION X RAY DIFFRACTION; LOW TEMPERATURES; ROCKING CURVES; SILICON PHOTONIC INTEGRATED CIRCUITS; SILICON-ON-INSULATOR SUBSTRATES;

WAFER BONDING;

EID: 63149179289     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2982874     Document Type: Conference Paper

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