Laser action in GaN pyramids grown on (111) silicon by selective lateral overgrowth

Applied Physics Letters

Volumn 73, Issue 16, 1998, Pages 2242-2244

  Bidnyk, S ^a   Little, B D ^a   Cho, Y H ^a   Krasinski, J ^a   Song, J J ^a   Yang, W ^b   McPherson, S A ^b  

^a OKLAHOMA STATE UNIVERSITY   (United States)

^b HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DENSITY OF STATES; LASER BEAM EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PUMPING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SPECTRUM ANALYSIS;

EXCITATION DENSITY; GALLIUM NITRIDE; INTEGRATED EMISSION INTENSITY; MULTIMODE LASER; SELECTIVE LATERAL OVERGROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032547594     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121689     Document Type: Article

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