Blister formation in ion-implanted GaAs: Role of diffusivity

Applied Physics Letters

Volumn 95, Issue 11, 2009, Pages

  Collino, R R ^a   Dick, B B ^a   Naab, F ^a   Wang, Y Q ^b   Thouless, M D ^a   Goldman, R S ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLISTER FORMATION; DAMAGE PROFILES; DIFFUSIVITIES; GAAS; HIGH-T; N ION IMPLANTATION; SUBSTRATE TEMPERATURE;

DIFFUSION; GALLIUM ALLOYS; ION BOMBARDMENT; ION IMPLANTATION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING;

SEMICONDUCTING GALLIUM;

EID: 70349481150     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3224199     Document Type: Article

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