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Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 5, 2008, Pages 1053-1055

Preparation of 3 inch freestanding GaN substrates by hydride vapor phase epitaxy with void-assisted separation

(6) Yoshida, T a Oshima, Y a Eri, T a Watanabe, K a Shibata, M a Mishima, T a

a HITACHI CABLE LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BASE SUBSTRATES; CARRIER DENSITIES; DISLOCATION DENSITIES; FREESTANDING GAN SUBSTRATES; GAN LAYERS; GAN SUBSTRATES; HYDRIDE VAPOR PHASE EPITAXIES; ION MASS SPECTROMETRIES; LIMIT OF DETECTIONS; REPRODUCIBILITY; SEPARATION METHODS; SEPARATION PROCESSES; SI CONCENTRATIONS;

CARRIER CONCENTRATION; CIVIL AVIATION; CONCENTRATION (PROCESS); CRYSTAL GROWTH; GALLIUM NITRIDE; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; ISOMERS; MASS SPECTROMETRY; PHASE SEPARATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEPARATION; SILICON; SUBSTRATES; VAPOR PHASE EPITAXY; VAPORS;

GALLIUM ALLOYS;

EID: 54849441920 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200778431 Document Type: Article

Times cited : (17)

References (8)

1
- 0030649030
- M. K. Kelly, O. Ambacher, R. Dimitrov, R. Handschuh, and M. Stutzmann, phys. stat. sol. (a) 159, R3 (1997).
- (1997) phys. stat. sol. (a) , vol.159
- Kelly, M.K.¹ Ambacher, O.² Dimitrov, R.³ Handschuh, R.⁴ Stutzmann, M.⁵

2
- 0002808273
- Y. V. Melnik, K. V. Vassilevski, I. P. Nikitina, A. I. Babanin, V. Y. Davydov, and V. A. Dmitriev, MRS Int. J. Nitride Semicond. Res. 2, 39 (1997).
- (1997) MRS Int. J. Nitride Semicond. Res , vol.2 , pp. 39
- Melnik, Y.V.¹ Vassilevski, K.V.² Nikitina, I.P.³ Babanin, A.I.⁴ Davydov, V.Y.⁵ Dmitriev, V.A.⁶

3
- 0032025340
- S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Jpn. J. Appl. Phys. 37, L309 (1998).
- (1998) Jpn. J. Appl. Phys , vol.37
- Nakamura, S.¹ Senoh, M.² Nagahama, S.³ Iwasa, N.⁴ Yamada, T.⁵ Matsushita, T.⁶ Kiyoku, Y.⁷ Sugimoto, Y.⁸ Kozaki, T.⁹ Umemoto, H.¹⁰ Sano, M.¹¹ Chocho, K.¹²

4
- 0037509966
- Y. Oshima, T. Eri, M. Shibata, H. Sunakawa, K. Obayashi, T. Ichihashi, and A. Usui, Jpn. J. Appl. Phys. 42, L1 (2003).
- (2003) Jpn. J. Appl. Phys , vol.42
- Oshima, Y.¹ Eri, T.² Shibata, M.³ Sunakawa, H.⁴ Obayashi, K.⁵ Ichihashi, T.⁶ Usui, A.⁷

5
- 0036968250
- Y. Oshima, T. Eri, M. Shibata, H. Sunakawa, and A. Usui, phys. stat. sol. (a) 194, 554 (2002).
- (2002) phys. stat. sol. (a) , vol.194 , pp. 554
- Oshima, Y.¹ Eri, T.² Shibata, M.³ Sunakawa, H.⁴ Usui, A.⁵

6
- 0036962341
- A. Usui, T. Ichihashi, K. Kobayashi, H. Sunakawa, Y. Oshima, T. Eri, and M. Shibata, phys. stat. sol. (a) 194, 572 (2002).
- (2002) phys. stat. sol. (a) , vol.194 , pp. 572
- Usui, A.¹ Ichihashi, T.² Kobayashi, K.³ Sunakawa, H.⁴ Oshima, Y.⁵ Eri, T.⁶ Shibata, M.⁷

7
- 0026925404
- S. Nakamura, T. Mukai, and M. Senoh, Jpn. J. Appl. Phys. 31, 2883 (1992).
- (1992) Jpn. J. Appl. Phys , vol.31 , pp. 2883
- Nakamura, S.¹ Mukai, T.² Senoh, M.³

8
- 34249887881
- Y. Oshima, T. Yoshida, T. Eri, M. Shibata, and T. Mishima, Jpn. J. Appl. Phys. 45, 7685 (2006).
- (2006) Jpn. J. Appl. Phys , vol.45 , pp. 7685
- Oshima, Y.¹ Yoshida, T.² Eri, T.³ Shibata, M.⁴ Mishima, T.⁵

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