Wafer Bonding and Epitaxial Transfer of GaSb-Based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices

Journal of Electronic Materials

Volumn 33, Issue 3, 2004, Pages 213-217

  Wang, C A ^a   Shiau, D A ^a   Murphy, P G ^a   O'Brien, P W ^a   Huang, R K ^b   Connors, M K ^a   Anderson, A C ^a   Donetsky, D ^b   Anikeev, S ^b   Belenky, G ^b   Depoy, D M ^c   Nichols, G ^c  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b STONY BROOK UNIVERSITY   (United States)

^c LOCKHEED MARTIN   (United States)

Author keywords

Epitaxial transfer; GaSb; Monolithic interconnection; Thermophotovoltaic devices; Wafer bonding

Indexed keywords

ELECTRON MOBILITY; ETCHING; FABRICATION; OPTOELECTRONIC DEVICES; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; REFLECTION; SEMICONDUCTING GALLIUM; THICKNESS MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL TRANSFER; MONOLITHIC INTERCONNECTION; THERMOPHOTOVOLTAIC DEVICES; WAFER-BONDING;

PHOTOVOLTAIC CELLS;

EID: 12144285599     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0182-y     Document Type: Article

References (21)

1. P.S. Dutta, H.L. Bhat, and V. Kumar, J. Appl. Phys. 81, 5821 (1997).
2. H.-R. Blank, M. Thomas, K.C. Wong, and H. Kroemer, Appl. Phys. Lett. 69, 2080 (1996).
3. K.G. Eyink, M.L. Seaford, T.W. Haas, D.H. Tomich, W.V. Lampert, S.D. Walck, J.S. Solomon, W.C. Mitchel, and L.F. Eastman, J. Vac. Sci. Technol. B 15, 1187 (1997).
4. M.N. Palmisiano, R.M. Biefeld, J.G. Cederberg, M.J. Hafich, and G.M. Peake, AIP Conf. Proc. 653, 305 (2003).
5. K.D. Hobart and F.J. Kub, Electron. Lett. 35, 675 (1999).
6. Y. Zheng, P.D. Moran, Z.F. Guan, S.S. Lau, D.M. Hansen, T.F. Kuech, T.E. Haynes, T. Hoechbauer, and M. Natasi, J. Electron. Mater. 29, 916 (2000).
7. S.S. Yi, D.M. Hansen, C.K. Inoki, D.L. Harris, T.S. Kuan, and T.F. Kuech, Appl. Phys. Lett. 77, 842 (2000).
8. P.D. Moran, D. Chow, A. Hunter, and T.F. Kuech, Appl. Phys. Lett. 78, 2232 (2001).
9. C.A. Wang, P.G. Murphy, P.W. O'Brien, D.A. Shiau, A.C. Anderson, Z.L. Liau, D.M. DePoy, and G. Nichols, AIP Conf. Proc. 653, 473 (2003).
10. C.A. Wang, Z.L. Liau, D.A. Shiau, and P.M. Nitishin, Mater. Res. Soc. Symp. Proc. 768, 101 (2003).
11. C.L. Shieh, J.Y. Chi, C.A. Armiento, P.G. Haugsjaa, and A. Negri, Electron. Lett. 27, 850 (1991).
12. F. Omnes, J.-C. Guillaume, G. Nataf, G. Jager-Waldau, P. Vennegues, and P. Gibart, IEEE Trans. Electron. Dev. 43, 1806 (1996).
13. G.W. Charache et al., J. Electron. Mater. 27, 1038 (1998).
14. C.A. Wang, H.K. Choi, and G.W. Charache, IEE Proc.-Optoelectron. 147, 193 (2000).
15. C.A. Wang, H.K. Choi, D.C. Oakley, and G.W. Charache, J. Cryst. Growth 195, 346 (1998).
16. G.C. DeSalvo, R. Kaspi, and C.A. Bozada, J. Electrochem. Soc. 141, 3526 (1994).
17. D. Donetsky, S. Anikeev, G. Belenky, S. Luryi, C.A. Wang, and G. Nichols, Appl. Phys. Lett. 81, 4769 (2002).
18. G.W. Charache, D.M. DePoy, P.F. Baldasaro, and B.C. Campbell, AIP Conf. Proc. 321, 339 (1996).
19. M.B. Clevenger, C.S. Murray, S.A. Ringel, R.N. Sacks, L. Qin, G.W. Charache, and D.M. DePoy, AIP Conf. Proc. 460, 327 (1999).
20. J.M. Borrego, S. Saroop, R.J. Gutman, G.W. Charache, T. Donovan, P.F. Baldasaro, and C.A. Wang, J. Appl. Phys. 89, 3753 (2001).
21. P. Asbeck, J. Appl. Phys. 48, 820 (1977).