A hybrid AlGaInAs-silicon evanescent amplifier

IEEE Photonics Technology Letters

Volumn 19, Issue 4, 2007, Pages 230-232

  Park, Hyundai ^a   Fang, Alexander W ^a   Cohen, Oded ^b   Jones, Richard ^b   Paniccia, Mario J ^b   Bowers, John E ^a  

^a University of California   (United States)

^b INTEL CORPORATION   (Israel)

Author keywords

Semiconductor optical amplifiers; Siliconon insulator (SOI) technology

Indexed keywords

ACTIVE REGIONS; ALGAINAS; CONFINEMENT FACTOR; ELECTRICAL CURRENT; EVANESCENT COUPLING; FABRICATED DEVICE; GAIN MEDIUM; HYBRID AMPLIFIER; LINEAR AMPLIFICATION; LOW TEMPERATURES; MATERIAL SYSTEMS; OPTICAL MODES; OUTPUT SATURATION; OXYGEN PLASMAS; QUANTUM WELL; SATURATION OUTPUT POWER; SILICON WAVEGUIDE; SILICONON-INSULATOR (SOI) TECHNOLOGY;

AMPLIFICATION; BONDING; FIBER LASERS; OPTICAL SWITCHES; OXYGEN; SEMICONDUCTOR OPTICAL AMPLIFIERS; WAFER BONDING; WAVEGUIDES;

SILICON WAFERS;

EID: 34248516030     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.891188     Document Type: Article

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