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International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn , Issue , 2008, Pages 1180-1183

GaAs/Si metal waferbonding for heterogeneous integrated circuits

(3) Bickford, Justin a Lau, S S a Yu, Paul K L a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CONTACTS; GAAS; HETEROGENEOUS INTEGRATIONS; ISOTHERMAL SOLIDIFICATIONS; METAL BONDINGS; METAL BONDS; PRE-PATTERNING; WAFER BONDING TECHNIQUES;

INTELLIGENT VEHICLE HIGHWAY SYSTEMS; METALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; THERMAL CONDUCTIVITY; WAFER BONDING;

INTEGRATED CIRCUITS;

EID: 60649120827 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/ICSICT.2008.4734757 Document Type: Conference Paper

Times cited : (4)

References (7)

1
- 0037428750
- Photocurrent method for characterizing the interface of hydrophobically bonded Si wafers
- L. S. Yu, P. Mages, D. Qiao, L. Jia, P. K. L. Yu, S. S. Lau, T. Suni, K. Henttinen, and I. Suni, "Photocurrent method for characterizing the interface of hydrophobically bonded Si wafers," Applied Physics Letters, vol. 82, pp. 916 918 (2003).
- (2003) Applied Physics Letters , vol.82
- Yu, L.S.¹ Mages, P.² Qiao, D.³ Jia, L.⁴ Yu, P.K.L.⁵ Lau, S.S.⁶ Suni, T.⁷ Henttinen, K.⁸ Suni, I.⁹

2
- 0000640092
- GaAs wafer bonding by atomic hydrogen surface cleaning
- T. Akatsu, A. Plößl, H. Stenzel, and U. Gösele, "GaAs wafer bonding by atomic hydrogen surface cleaning", Journal of Applied Physics, vol. 86, no. 12, pp. 7146-7150 (1999).
- (1999) Journal of Applied Physics , vol.86 , Issue.12 , pp. 7146-7150
- Akatsu, T.¹ Plößl, A.² Stenzel, H.³ Gösele, U.⁴

3
- 0042510542
- Hybrid Integration of III V Optoelectronic Devices on Si Platform Using BCB
- A. Katsnelson, V. Tokranov, M. Yakimov, M. Lamberti, and S. Oktyabrsky, "Hybrid Integration of III V Optoelectronic Devices on Si Platform Using BCB," Materials Research Society Symposium Proceedings, vol. 741, pp. 123 128 (2003).
- (2003) Materials Research Society Symposium Proceedings , vol.741
- Katsnelson, A.¹ Tokranov, V.² Yakimov, M.³ Lamberti, M.⁴ Oktyabrsky, S.⁵

4
- 0037129113
- Phase relationships in the In-rich part of the In-Pd system
- H. Flandorfer, "Phase relationships in the In-rich part of the In-Pd system," Journal of Alloys and Compounds, vol. 336, pp. 176-180 (2002).
- (2002) Journal of Alloys and Compounds , vol.336 , pp. 176-180
- Flandorfer, H.¹

5
- 0001888905
- Fundamentals of Bonding by Isothermal Solidification for High Temperature Semiconductor Applications
- edited by R. Y. Lin, Y. A. Chang, R. G Reddy, and C. T. Liu, The Minerals, Metals & Materials Society, pp
- R. Schmid-Fetzer, "Fundamentals of Bonding by Isothermal Solidification for High Temperature Semiconductor Applications," Design Fundamentals of High Temperature Composits, Intermetallics, and Metal-Ceramics Systems, edited by R. Y. Lin, Y. A. Chang, R. G Reddy, and C. T. Liu, The Minerals, Metals & Materials Society, pp. 75-99 (1995).
- (1995) Design Fundamentals of High Temperature Composits, Intermetallics, and Metal-Ceramics Systems , pp. 75-99
- Schmid-Fetzer, R.¹

6
- 33745792543
- Justin R. Bickford, D. Qiao, P. K. L. Yu, and S. S. Lau, Electrical characterization of GaAs metal bonded to Si, Applied Physics Letters, 89, issue 1, Jul 2006, pp. 12106-1-3.
- Justin R. Bickford, D. Qiao, P. K. L. Yu, and S. S. Lau, "Electrical characterization of GaAs metal bonded to Si", Applied Physics Letters, vol. 89, issue 1, Jul 2006, pp. 12106-1-3.

7
- 0024774445
- Electrical Resistivity of Pd-In Alloys
- I. P. Grebennik and V. I. Tsimbal, "Electrical Resistivity of Pd-In Alloys," Physics of Metals and Metallography, vol. 67, pp. 195-197 (1989).
- (1989) Physics of Metals and Metallography , vol.67 , pp. 195-197
- Grebennik, I.P.¹ Tsimbal, V.I.²

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