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Volumn 4, Issue 10, 2004, Pages 1987-1990

Epitaxial III-V nanowires on silicon

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTIONS; NUCLEATION; PHOTONS; RESONANT TUNNELING; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; SUPERLATTICES;

EID: 7544241259     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0487267     Document Type: Article
Times cited : (554)

References (34)
  • 10
    • 0002992361 scopus 로고
    • Levitt, A. P., Ed.; Wiley: New York
    • Wagner, R. S. In Whisker Technology; Levitt, A. P., Ed.; Wiley: New York, 1970; pp 47-119.
    • (1970) Whisker Technology , pp. 47-119
    • Wagner, R.S.1
  • 24
    • 7544221331 scopus 로고    scopus 로고
    • note
    • The Si(111) surface actually has four possible 〈111〉 growth directions, one vertical and three forming an angle of 19.5° with the substrate surface, distributed 120° apart azimuthally. We observe only the vertical [111] direction, which is expected if the gold-silicon interface is flat, as the only facet available for nucleation is then the (111) facet.
  • 34
    • 7544230429 scopus 로고    scopus 로고
    • note
    • The phosphorous content of the GaAsP segment measured with XEDS is probably somewhat higher than that of the actual segment core; after growth of the segment a thin shell of GaP is deposited over the GaAsP core due to lateral growth when the end part of the GaP nanowire is grown.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.