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Volumn 16, Issue 8, 2009, Pages 227-234

Engineering substrates for 3d integration of iii-v and CMOS

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CUTOFF FREQUENCY; FIELD EFFECT TRANSISTORS; GERMANIUM COMPOUNDS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM PHOSPHIDE; THREE DIMENSIONAL INTEGRATED CIRCUITS; WAFER BONDING;

EID: 63149182948     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2982873     Document Type: Conference Paper
Times cited : (6)

References (5)
  • 3
    • 1442360367 scopus 로고    scopus 로고
    • C. Maleville and C. Mazure. Smart Cut™ technology: From 300 mm ultrathin SOI production to advanced engineered substrates. Solid-State Electron. 48 (6) une (2004), 1055-1063.
    • C. Maleville and C. Mazure. "Smart Cut™ technology: From 300 mm ultrathin SOI production to advanced engineered substrates." Solid-State Electron. 48 (6) une (2004), 1055-1063.
  • 4
    • 63149150985 scopus 로고    scopus 로고
    • Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers, by O. Baklenov, D. Lubyshev, Y. Wu, X.-M. Fang, J. M. Fastenau, L. Leung, F. J. Towner, A. B. Cornfeld, and W. K. Liu, published May/June 2002.
    • Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers, by O. Baklenov, D. Lubyshev, Y. Wu, X.-M. Fang, J. M. Fastenau, L. Leung, F. J. Towner, A. B. Cornfeld, and W. K. Liu, published May/June 2002.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.