Effects in synergistic blistering of silicon by coimplantation of H, D, and He ions

Applied Physics Letters

Volumn 86, Issue 5, 2005, Pages 1-3

  Moutanabbir, O ^a   Terreault, B ^a  

^a INRS EMT   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DEUTERIUM; ION IMPLANTATION; ISOTOPES; PASSIVATION; PRESSURIZATION; RAMAN SCATTERING;

COIMPLANTATION; H-PASSIVATED INTERNAL SURFACES; SILICON BLISTERING; SYNERGISTIC BLISTERING;

SILICON;

EID: 18644375817     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1861502     Document Type: Article

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