Hydrogen-decorated lattice defects in proton implanted GaN

Applied Physics Letters

Volumn 72, Issue 14, 1998, Pages 1703-1705

  Weinstein, Marcie G ^a   Song, C Y ^a   Stavola, Michael ^a   Pearton, S J ^b   Wilson, R G ^c   Shul, R J ^d   Killeen, K P ^a   Ludowise, M J ^a  

^a LEHIGH UNIVERSITY   (United States)

^b University of Florida   (United States)

^c Sandia National Laboratories ^*

^d HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001741371     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121157     Document Type: Article

References (27)

1. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 28, L2112 (1989).
2. F. A. Ponce and D. P. Bour, Nature (London) 386, 351 (1997).
3. GaN and Related Materials, edited by S. J. Pearton (Gordon and Breach, Amsterdam, 1997).
4. S. J. Pearton, GaN and Related Materials, edited by S. J. Pearton (Gordon and Breach, Amsterdam, 1997), p. 333.
5. S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys., Part 1 31, 1258 (1992).
6. W. Götz, N. M. Johnson, D. P. Bour, M. D. McCluskey, and E. E. Haller, Appl. Phys. Lett. 69, 3725 (1996).
7. J. Neugebauer and C. G. Van de Walle, Phys. Rev. Lett. 75, 4452 (1995).
8. S. J. Pearton, C. R. Abernathy, C. B. Vartuli, J. W. Lee, J. D. MacKenzie, R. G. Wilson, R. J. Shul, F. Ren, and J. M. Zavada, J. Vac. Sci. Technol. A 14, 831 (1996).
9. Hydrogen in Semiconductors, edited by J. I. Pankove and N. M. Johnson (Academic, Boston, 1991).
10. S. J. Pearton, J. W. Corbett, and M. Stavola, Hydrogen in Crystalline Semiconductors (Springer, Berlin, 1992).
11. Hydrogen in Compound Semiconductors, edited by S. J. Pearton (Trans Tech, Aedermannsdorf, 1994).
12. J. Chevallier, Defect Diffus. Forum 131-132, 9 (1996).
13. J. Neugebauer and C. G. Van de Walle, Appl. Phys. Lett. 68, 1829 (1996).
14. C. G. Van de Walle, Phys. Rev. B 56, R10020 (1997).
15. B. Bech Nielsen, L. Hoffman, M. Budde, R. Jones, J. Goss, and S. Öberg, Mater. Sci. Forum 196-201, 933 (1995), and the references contained therein.
16. D. W. Fischer, M. O. Manasreh, and G. Matous, J. Appl. Phys. 71, 4805 (1992).
17. H. J. Stein and J. C. Barbour, Phys. Rev. B 56, 3813 (1997).
18. H. J. Stein, Appl. Phys. Lett. 57, 792 (1990);
19. Nucl. Instrum. Methods Phys. Res. B 59/60, 1106 (1991).
20. B. Pajot, J. Chevallier, A. Chaumont, and R. Azoulay, Defects in Electronic Materials, edited by M. Stavola, S. J. Pearton, and G. Davies (Materials Research Society, Pittsburgh, PA, 1988), p. 345.
21. S. J. Pearton, Mater. Sci. Rep. 4, 313 (1990).
22. S. C. Binari, H. B. Dietrich, G. Kelner, L. B. Rowland, K. Doverspike, and D. K. Wickenden, J. Appl. Phys. 78, 3008 (1995).
23. C. P. Ewels, S. Öberg, R. Jones, B. Pajot, and P. R. Briddon, Semicond. Sci. Technol. 11, 502 (1996).
24. R. C. Newman, Semicond. Sci. Technol. 5, 911 (1990).
25. R. Darwich, B. Pajot, B. Rose, D. Robein, B. Theys, R. Rahbi, C. Porte, and F. Gendron, Phys. Rev. B 48, 17776 (1993).
26. F. X. Zach, E. E. Haller, D. Gabbe, G. Iseler, G. G. Bryant, and D. F. Bliss, J. Electron. Mater. 25, 331 (1996).
27. B. Clerjaud, D. Cote, and C. Naud, Phys. Rev. Lett. 58, 1755 (1987).