Low temperature InP layer transfer onto Si by helium implantation and direct wafer bonding

Semiconductor Science and Technology

Volumn 21, Issue 9, 2006, Pages 1311-1314

  Singh, R ^a   Radu, I ^a   Scholz, R ^a   Himcinschi, C ^a   Gosele U ^a   Christiansen, S H ^a,b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HELIUM; ION IMPLANTATION; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

AS-IMPLANTED WAFERS; DIRECT WAFER BONDING; HELIUM IMPLANTATION-INDUCED LAYER SPLITTING; SPIN-ON GLASS (SOG) OXIDE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 33747238267     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/9/016     Document Type: Article

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