Fabrication of transfer-enhanced semiconductor substrates by wafer bonding and hydrogen exfoliation techniques

Electrochemical and Solid-State Letters

Volumn 11, Issue 8, 2008, Pages

  Joshi, Monali B ^a   Hayashi, Sumiko L ^a   Goorsky, Mark S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BIOCONVERSION; CHEMICAL FINISHING; CHEMICAL MECHANICAL POLISHING; CHEMICAL POLISHING; CHEMICAL VAPOR DEPOSITION; CRYSTAL ATOMIC STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; ELECTRON OPTICS; FRACTURE; FRACTURE FIXATION; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDROGEN; IMAGING TECHNIQUES; MICROSCOPES; MICROSCOPIC EXAMINATION; NONMETALS; POROUS SILICON; SCANNING PROBE MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; SILICON; SILICON WAFERS; SURFACE STRUCTURE; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; WAFER BONDING; X RAY DIFFRACTION ANALYSIS;

(1 1 0) SURFACE; ATOMIC FORCE (AF); CRYSTALLINE QUALITY; ELECTROCHEMICAL SOCIETY (ECS); EPITAXIAL DEPOSITION; HIGH RESOLUTION X RAY DIFFRACTION (HR XRD); LAYER-TRANSFER (LT); MECHANICAL POLISHING; POROUS SI; POROUS SURFACES; SEMICONDUCTOR SUBSTRATES; SI WAFER; SILICON LAYERS; THIN LAYERING;

SUBSTRATES;

EID: 45249084072     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2940345     Document Type: Article

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