Nucleation and growth of platelets in hydrogen-ion-implanted silicon

Applied Physics Letters

Volumn 86, Issue 15, 2005, Pages 1-3

  Nastasi, Michael ^a   Höchbauer, Tobias ^a   Lee, Jung Kun ^a   Misra, Amit ^a   Hirth, John P ^a   Ridgway, Mark ^b   Lafford, Tamzin ^c  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c Bede Scientific Instruments Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; HYDROGEN; ION IMPLANTATION; NUCLEATION; POSITIVE IONS; RADIATION DAMAGE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

PLANAR DEFECTS; PLATELETS; TENSILE STRAIN; TWO-DIMENSIONAL ARRAYS;

SILICON;

EID: 20944435198     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1900309     Document Type: Article

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