Bulk GaN ion cleaving

Journal of Electronic Materials

Volumn 39, Issue 5, 2010, Pages 482-488

  Moutanabbir, O ^a   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Bow; Bulk GaN; Interfacial stress; Ion implantation; Ion cut; Thin layer transfer; Wafer bonding

Indexed keywords

BLUE LASER DIODES; BOW; DONOR WAFERS; FREESTANDING GAN; HIGH COSTS; HIGH QUALITY; INTERFACIAL STRESS; ION CLEAVING; ION-CUT; ION-CUT PROCESS; KEY MATERIALS; LIGHT IONS; POTENTIAL TECHNOLOGIES; SURFACE IRREGULARITIES; THIN LAYERS;

COST REDUCTION; GALLIUM ALLOYS; GALLIUM NITRIDE; ION IMPLANTATION; THIN FILMS;

WAFER BONDING;

EID: 77954621815     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1100-0     Document Type: Conference Paper

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