Heterogeneous silicon integration by ultra-high vacuum wafer bonding

Journal of Electronic Materials

Volumn 32, Issue 8, 2003, Pages 849-854

  Kim, M J ^a   Carpenter, R W ^b  

^a Center for Advanced Research and Technology   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Heterogeneous integration; Interface; Transmission electron microscopy; Wafer bonding

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; BONDING; COMPOSITION; DEPOSITION; INTERFACES (MATERIALS); SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY; VACUUM APPLICATIONS;

HETEROGENEOUS INTEGRATION; ULTRAHIGH VACUUM WAFER BONDING; WAFER BONDING;

SILICON WAFERS;

EID: 0041941109     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0199-7     Document Type: Article

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