Blistering/exfoliation kinetics of GaAs by hydrogen and helium implantations

Surface and Coatings Technology

Volumn 203, Issue 17-18, 2009, Pages 2370-2374

  Woo, H J ^a   Choi, H W ^a   Kim, G D ^a   Kim, J K ^a   Kim, K J ^a  

^a Korea Institute of Geosceince and Mineral Resources   (South Korea)

Author keywords

Blistering and exfoliation kinetics; GaAs; Helium implantation; Hydrogen implantation

Indexed keywords

ANNEALING TEMPERATURES; BLISTERING AND EXFOLIATION KINETICS; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPIES; FLUENCE; FLUENCES; FRACTURE PATHS; GAAS; GAAS WAFERS; GAAS(1 0 0); HELIUM IMPLANTATION; HELIUM IONS; HIGH RESOLUTION X-RAY DIFFRACTIONS; HYDROGEN IMPLANTATION; IMPLANTATION TEMPERATURES; ION FLUENCE; ROOM TEMPERATURES; TEMPERATURE RANGES;

ANNEALING; GALLIUM ALLOYS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDROGEN; IONS; OPTICAL MICROSCOPY; RADIOACTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS; VACANCIES; X RAY DIFFRACTION;

HELIUM;

EID: 67349166631     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2009.03.043     Document Type: Article

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