Monolithic III-V/Si integration

ECS Transactions

Volumn 19, Issue 5, 2009, Pages 345-350

  Fitzgerald, E A ^a   Bulsara, M T ^a   Bai, Y ^a   Cheng, C ^a   Liu, W K ^b   Lubyshev, D ^b   Fastenau, J M ^b   Wu, Y ^b   Urtega, M ^c   Ha, W ^c   Bergman, J ^c   Brar, B ^c   Drazek, C ^d   Daval, N ^d   Letertre, F ^d   Hoke, W E ^e   LaRoche, J R ^e   Herrick, K J ^e   Kazior, T E ^e  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b IQE INC   (United States)

^c TELEDYNE SCIENTIFIC COMPANY   (United States)

^d PARC TECHNOLOGIQUE DES FONTAINES   (France)

^e RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES;

ELECTRONIC DEVICE; HIGH MOBILITY MATERIALS; III-V/SI INTEGRATIONS; MONOLITHIC INTEGRATION; PROCESS INTEGRATION; SILICON CMOS; SILICON MATERIALS;

CMOS INTEGRATED CIRCUITS;

EID: 77149169766     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3119557     Document Type: Conference Paper

References (2)

1. C.L. Dohrman, K. Chilukuri, D.M. Isaacson, M.L. Lee, and E.A. Fitzgerald, Materials Science and Engineering B, 135, 235 (2006).
2. K. Chilukuri, M.J. Mori, CL. Dohrman, and E.A. Fitzgerald, Semiconductor Sci. and Tech., 22, 29 (2007).