Porous III-V compound semiconductors: Formation, properties, and comparison to silicon

Physica Status Solidi (A) Applied Research

Volumn 197, Issue 1, 2003, Pages 61-70

  Foll H ^a   Carstensen, J ^a   Langa, S ^a,b   Christophersen, M ^a   Tiginyanu, I M ^b  

^a UNIVERSITY OF KIEL   (Germany)

^b TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; DISLOCATIONS (CRYSTALS); DISSOLUTION; ELECTRIC SPACE CHARGE; LUMINESCENCE; MESOPOROUS MATERIALS; MICROPOROUS MATERIALS; MORPHOLOGY; NUCLEATION; POROUS SILICON;

AVALANCHE BREAKDOWN; PORE FORMATION; PORE ZOOLOGY; SILICON PORE; SPACE CHARGE REGION;

SEMICONDUCTING SILICON;

EID: 0038377269     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306469     Document Type: Conference Paper

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