Monolithic integration of AlGaInP laser diodes on SiGe/Si substrates by molecular beam epitaxy

Journal of Applied Physics

Volumn 100, Issue 1, 2006, Pages

  Kwon, O ^a   Boeckl, J J ^a   Lee, M L ^b   Pitera, A J ^b   Fitzgerald, E A ^b   Ringel, S A ^a  

^a Ohio State University   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT SENSITIVE OPTOELECTRONICS; EMISSION WAVELENGTH; HETEROEPITAXIAL METHODS; STRAINED LASERS;

CURRENT DENSITY; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; OPTOELECTRONIC DEVICES; PULSED LASER APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON COMPOUNDS;

SEMICONDUCTOR LASERS;

EID: 33746211194     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2209068     Document Type: Article

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