Thermal evolution of defects produced by implantation of H, D and He in Silicon

Applied Surface Science

Volumn 255, Issue 1, 2008, Pages 63-67

  Simpson, P J ^a   Knights, A P ^b   Chicoine, M ^c   Dudeck, K ^b   Moutanabbir, O ^d   Ruffell, S ^e   Schiettekatte, F ^c   Terreault, B ^d  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b MCMASTER UNIVERSITY   (Canada)

^c UNIVERSITÉ DE MONTRÉAL   (Canada)

^d INRS EMT   (Canada)

^e AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Blistering; Defects; Ion cutting; Positron annihilation; Silicon

Indexed keywords

DEFECTS; ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; ELECTRONS; HEAVY METALS; HELIUM; IONS; METAL CUTTING; POINT DEFECTS; POSITRON ANNIHILATION; POSITRONS; SILICON; SILICON ON INSULATOR TECHNOLOGY;

BLISTERING; DEFECT PRODUCTION; EFFECT OF ANNEALING; ION CUTTING; ISOTOPIC SUBSTITUTION; METAL IMPURITIES; RESIDUAL DEFECTS; THERMAL EVOLUTION;

VACANCIES;

EID: 53049096377     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.05.171     Document Type: Article

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