SCOPUS 정보 검색 플랫폼

Electronics Letters

Volumn 41, Issue 13, 2005, Pages 742-744

Room-temperature self-organised in0.5Ga0.5As quantum dot laser on silicon

(4) Mi, Z a Bhattacharya, P a Yang, J a Pipe, K P a

a UNIVERSITY OF MICHIGAN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT DENSITIES; QUANTUM DOT LASERS; SILICON SUBSTRATES; TEMPERATURE STABILITY;

SEMICONDUCTOR LASERS;

EID: 22944438437 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20051558 Document Type: Article

Times cited : (96)

References (7)

1
- 0042637913
- Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser
- Park, G., Shchekin, O.B., Csutak, S., Huffaker, D.L., and Deppe, D.G.: 'Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser', Appl. Phys. Lett., 1999, 75, pp. 3267-3269
- (1999) Appl. Phys. Lett. , vol.75 , pp. 3267-3269
- Park, G.¹ Shchekin, O.B.² Csutak, S.³ Huffaker, D.L.⁴ Deppe, D.G.⁵

2
- 14344267976
- 3.9 W CW power from sub-monolayer quantum dot diode laser
- Zhukov, A.E., Kovsh, A.R., Mikhrin, S.S., Maleev, N.A., Ustinov, V.M., Livshits, D.A., Tarasov, I.S., Bedarev, D.A., Maximov, M.V., Tsatsulnikov, A.F., Soshnikov, I.P., Kopev, P.S., Alferov, Zh.I., Ledentsov, N.N., and Bimberg, D.: '3.9 W CW power from sub-monolayer quantum dot diode laser', Electron. Lett., 1999, 35, pp. 1845-1846
- (1999) Electron. Lett. , vol.35 , pp. 1845-1846
- Zhukov, A.E.¹ Kovsh, A.R.² Mikhrin, S.S.³ Maleev, N.A.⁴ Ustinov, V.M.⁵ Livshits, D.A.⁶ Tarasov, I.S.⁷ Bedarev, D.A.⁸ Maximov, M.V.⁹ Tsatsulnikov, A.F.¹⁰ Soshnikov, I.P.¹¹ Kopev, P.S.¹² Alferov, Zh.I.¹³ Ledentsov, N.N.¹⁴ Bimberg, D.¹⁵

3
- 11044225644
- 0 = infinity) of p-doped 1.3 μm quantum dot lasers
- 0 = infinity) of p-doped 1.3 μm quantum dot lasers', Appl. Phys. Lett., 2004, 85, pp. 5164-5166
- (2004) Appl. Phys. Lett. , vol.85 , pp. 5164-5166
- Fathpour, S.¹ Mi, Z.² Bhattacharya, P.³ Kovsh, A.R.⁴ Mikhrin, S.S.⁵ Krestnikov, I.L.⁶ Kozhukhov, A.V.⁷ Ledentsov, N.N.⁸

4
- 21044439814
- High-speed quantum dot lasers
- to appear in May 2005 issue
- Fathpour, S., Mi, Z., and Bhattacharya, P.: 'High-speed quantum dot lasers', J. Phys. D: Appl. Phys. (to appear in May 2005 issue)
- J. Phys. D: Appl. Phys.
- Fathpour, S.¹ Mi, Z.² Bhattacharya, P.³

5
- 0000139837
- 0.6As quantum-dot lasers grown on Si substrates
- 0.6As quantum-dot lasers grown on Si substrates', Appl. Phys. Lett., 1999, 74, pp. 1355-1357
- (1999) Appl. Phys. Lett. , vol.74 , pp. 1355-1357
- Linder, K.K.¹ Phillips, J.² Osasaimeh, O.³ Liu, X.F.⁴ Krishina, S.⁵ Bhattacharya, P.⁶ Jiang, J.C.⁷

6
- 0039565588
- 1-xAs quantum dots by metal-organic chemical vapor deposition on Si substrates and in GaAs-based lasers
- 1-xAs quantum dots by metal-organic chemical vapor deposition on Si substrates and in GaAs-based lasers', J. Appl. Phys., 2001, 90, pp. 5463-5468
- (2001) J. Appl. Phys. , vol.90 , pp. 5463-5468
- Kazi, Z.I.¹ Egawa, T.² Umeno, M.³ Jimbo, T.⁴

7
- 79957929085
- 0 = 161 K from 0 to 80 degrees C
- 0 = 161 K from 0 to 80 degrees C', Appl. Phys. Lett., 2002, 80, pp. 3277-3279
- (2002) Appl. Phys. Lett. , vol.80 , pp. 3277-3279
- Shchekin, O.B.¹ Deppe, D.G.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.