InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon-doped base grown by organometallic chemical vapor deposition

Applied Physics Letters

Volumn , Issue , 1995, Pages 985-

  Bhat, R ^a   Hong, W P ^a   Caneau, C ^a   Koza, M A ^a   Nguyen, C K ^a   Goswami, S ^a  

^a TELCORDIA TECHNOLOGIES   (United States)

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EID: 36449002595     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116120     Document Type: Article

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