Stress adjustment and bonding of H-implanted 2 in. Freestanding GaN wafer: The concept of double-sided splitting

Electrochemical and Solid-State Letters

Volumn 12, Issue 4, 2009, Pages

  Moutanabbir, O ^a   Senz, S ^a   Scholz, R ^a   Christiansen, S ^a   Reiche, M ^a   Avramescu, A ^b   Strauss, U ^b   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM;

EFFICIENT METHODS; HIGH QUALITIES; POST IMPLANTATIONS; STRESS ENGINEERINGS; THIN LAYERS;

WAFER BONDING;

EID: 60449089494     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3066081     Document Type: Article

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