Growth and defects of GaAs and InGaAs films on porous GaAs substrates

Thin Solid Films

Volumn 515, Issue 10, 2007, Pages 4445-4449

  Buzynin, Alexander N ^a   Buzynin, Yury N ^b   Belyaev, Alexander V ^b   Luk'yanov, Albert E ^c   Rau, Eduard I ^c  

^a PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

^b INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^c MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

Electrical properties and measurements; Epitaxy; Gallium arsenide; Porous substrates

Indexed keywords

ELECTRIC PROPERTIES; FILM GROWTH; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SINGLE CRYSTALS; SUBSTRATES;

ELECTRIC UNIFORMITY; GETTERING PROPERTIES; POROUS SUBSTRATES; STRUCTURAL DEFECTS;

THIN FILMS;

EID: 33847189612     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.175     Document Type: Article

References (3)

1. Buzvnin Yu., Belyaev A., Akhsakhalyan A., et al. Proc. of Inter. Congress "MW-2001", Advanced Materials 25-28 Sept. 2000, Munich, Germany (2000) Article 672
2. Buzvnin Yu., Vostokov N., Gaponova D., et al. Buffer layers InGaAs on substrates of porous GaAs, News of RAS. ser. Phys. N4 (2003) 591
3. Rau E.I., Zhukov A.N., and Yakimov E.B. Solid-State Phenomena 53-54 (1998) 327