SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 8, 2001, Pages 4837-4844

Crystalline defects in InP-to-silicon direct wafer bonding

(4) Pasquariello, D a Camacho, M a Ericsson, F a Hjort, K a

a UPPSALA UNIVERSITY (Sweden)

Author keywords

Dislocations; Heteroepitaxy; InP; Si; Thermal stress; Wafer bonding

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; BOND STRENGTH (MATERIALS); DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HYDROPHOBICITY; INFRARED TRANSMISSION; NUCLEATION; SILICON WAFERS; THERMAL STRESS;

DIRECT WAFER BONDING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0035414499 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.4837 Document Type: Article

Times cited : (20)

References (35)

1
- 0026414820
- (1991) J. Cryst. Growth , vol.115 , pp. 154
- Itakura, H.¹ Suzuki, T.² Jiang, Z.K.³ Soga, T.⁴ Jimbo, T.⁵ Umeno, M.⁶

2
- 0031546771
- (1997) J. Cryst. Growth , vol.172 , pp. 44
- Peiner, E.¹ Wehmann, H.-H.² Iber, H.³ Mo, S.⁴ Tang, G.-P.⁵ Bartels, A.⁶ Schlachetzki, A.⁷ Koch, A.⁸ Dettmer, K.⁹ Hollfelder, M.¹⁰

3
- 0000922090
- (1995) J. Appl. Phys. , vol.78 , pp. 224
- Bartels, A.¹ Peiner, E.² Klockenbrink, R.³ Schlachetzki, A.⁴

4
- 36549092955
- (1990) J. Appl. Phys. , vol.68 , pp. 540
- Sugo, M.¹ Takanashi, Y.² Al-Jassim, M.M.³ Yamaguchi, M.⁴

5
- 0001291576
- (1990) J. Appl. Phys. , vol.68 , pp. 3338
- Wuu, D.S.¹ Horng, R.H.² Lee, M.K.³

6
- 0001440627
- (1995) J. Appl. Phys. , vol.78 , pp. 6141
- Bartels, A.¹ Pernier, E.² Schlachetzki, A.³

7
- 0033176796
- (1999) Solid State Electron. , vol.43 , pp. 1655
- Wada, H.¹ Sasaki, H.² Kamijoh, T.³

8
- 0000356406
- (1997) Appl. Phys. Lett. , vol.70 , pp. 1685
- Ejeckam, F.¹ Lo, Y.H.² Subramaian, S.³ Hou, H.Q.⁴ Hammons, B.E.⁵

9
- 0026911948
- (1992) J. Micromech. Microeng. , vol.2 , pp. 158
- Bäcklund, Y.¹ Ljungberg, K.² Söderbärg, A.³

10
- 0032606191
- (1999) Appl. Phys. Lett. , vol.75 , pp. 2141
- Levine, B.¹ Pinzone, C.J.² Hui, S.³ King, C.A.⁴ Leibenguth, R.E.⁵ Zolnowski, D.R.⁶ Lang, D.V.⁷ Krautter, H.W.⁸ Geva, M.⁹

11
- 0031153807
- (1997) J. Sel. Top. Quantum Electron. , vol.3 , pp. 943
- Black, A.¹ Hawkins, A.R.² Margalit, N.M.³ Babic, D.I.⁴ Holmes, A.L.⁵ Chang, Y.-L.⁶ Abraham, P.⁷ Bowers, J.E.⁸ Hu, E.L.⁹

12
- 0033877375
- (2000) J. Electron. Mater. , vol.29 , pp. 188
- Tan, I.-H.¹ Vanderwater, D.A.² Huang, J.-W.³ Hofler, G.E.⁴ Kish, F.A.⁵ Chen, E.I.⁶ Ostentowski, T.D.⁷

13
- 0001181956
- (1998) Appl. Phys. Lett. , vol.72 , pp. 3181
- Kopperschmidt, P.¹ Senz, S.² Kästner, G.³ Hesse, D.⁴ Gösele, U.M.⁵

14
- 0000773033
- (2000) J. Appl. Phys. , vol.87 , pp. 4135
- Sagalowicz, L.¹ Rudra, A.² Kapon, E.³ Hammar, M.⁴ Salomonsson, F.⁵ Black, A.⁶ Joneau, P.-H.⁷ Wipijewski, T.⁸

15
- 0031273753
- (1997) J. Appl. Phys. , vol.82 , pp. 4892
- Patriarche, G.¹ Jeannes, F.² Oudar, J.L.³ Glas, F.⁴

16
- 0028509792
- (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 4878
- Wada, H.¹ Kamijoh, T.²

17
- 85031528743
- (1993) Inst. Phys. Conf. Ser. , vol.33 , pp. 87
- Gafiteanu, R.¹ Chevacharoenkul, S.² Gösele, U.M.³ Tan, T.Y.⁴

18
- 0002589765
- (1975) J. Cryst. Growth , vol.29 , pp. 80
- Huber, A.¹ Linh, N.T.²

19
- 84989479589
- (1989) Cryst. Res. Technol. , vol.24 , pp. 1245
- Knauer, A.¹ Zeimer, U.² Sprenger, R.³

20
- 0021426017
- (1984) J. Electrochem. Soc. , vol.123 , pp. 1140
- Yang, K.H.¹

21
- 0000183935
- (1997) Int. J. High Speed Electron. Syst. , vol.8 , pp. 357
- Babic, D.¹ Bowers, J.E.² Hu, E.L.³ Yang, L.⁴ Carey, K.⁵

22
- 0034205041
- (2000) J. Electrochem. Soc. , vol.147 , pp. 2343
- Pasquariello, D.¹ Hjort, K.²

23
- 36449006059
- (1994) Appl. Phys. Lett. , vol.64 , pp. 625
- Tong, Q.-Y.¹ Schmidt, E.² Gösele, U.³ Reiche, M.⁴

24
- 0000357002
- (1920) Philos. Trans. A , vol.221 , pp. 163
- Griffith, A.A.¹

25
- 0026142873
- (1991) Jpn. J. Appl. Phys. , vol.30 , pp. 615
- Mitani, K.¹ Lehmann, V.² Stengl, R.³ Feijoo, D.⁴ Gösele, U.M.⁵ Massoud, H.Z.⁶

26
- 0020909061
- (1983) J. Electrochem. Soc. , vol.130 , pp. 2398
- Chu, S.N.G.¹ Jodlauk, C.M.² Johnston, W.D.³

27
- 0026142894
- (1991) Jpn. J. Appl. Phys. , vol.30 , pp. 551
- Tachikawa, M.¹ Mori, H.²

28
- 0002883494
- (1990) Sov. Phys. Crystallogr. , vol.35 , pp. 695
- Mezhennyi, M.V.¹ Osvenskii, V.B.² Milvidskaya, A.G.³

29
- 0003698331
- PWS Publishing, Boston, 3rd ed.
- (1994) Physical Metallurgy Principles
- Reed-Hill, R.E.¹ Abbaschian, R.²

30
- 4243477040
- (1988) Phys. Rev. B , vol.37 , pp. 8234
- Gupta, P.¹ Colvin, V.L.² George, S.M.³

31
- 0001462960
- (1996) J. Vac. Sci. & Technol. B , vol.14 , pp. 691
- Losurdo, M.¹ Capezzuto, P.² Bruno, G.³

32
- 0027911766
- (1993) Appl. Phys. Lett. , vol.62 , pp. 1038
- Lo, Y.-H.¹ Bhat, R.² Hwang, D.M.³ Chua, C.⁴ Lin, C.-H.⁵

33
- 0032158384
- (1998) J. Vac. Sci. & Technol. B , vol.16 , pp. 2672
- Riesz, F.¹ Dobos, L.² Karanyi, J.³

34
- 0020909061
- (1983) J. Electrochem. Soc. , vol.130 , pp. 2398
- Chu, S.N.G.¹ Jodlauk, C.M.² Johnston, W.D.³

35
- 0035932204
- (2001) Mater. Sci. & Eng. B , vol.80 , pp. 134
- Pasquariello, D.¹ Camacho, M.² Hjort, K.³ Dozsa, L.⁴ Szentapali, B.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.