Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation

Applied Physics Letters

Volumn 73, Issue 25, 1998, Pages 3721-3723

  Weldon, M K ^a   Collot, M ^a   Chabal, Y J ^a   Venezia, V C ^b   Agarwal, A ^b   Haynes, T E ^b   Eaglesham, D J ^a   Christman, S B ^a   Chaban, E E ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001158740     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122875     Document Type: Article

References (14)

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11. * defects are located in a region with a large dielectric perturbation, i.e., next to the largest internal cracks.
12. -1 in those samples, which effectively precludes such an assignment here.
13. Y. Caudano, M. K. Weldon, Y. J. Chabal, B. B. Stefanov, K. Raghavachari, D. C. Jacobson, S. B. Christman, and E. E. Chaban, in Ref. 2, p. 365.
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