Properties of hydrogen induced voids in silicon

Journal of Physics Condensed Matter

Volumn 17, Issue 22, 2005, Pages

  Weber, J ^a   Fischer, T ^a   Hieckmann, E ^a   Hiller, M ^a   Lavrov, E V ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; DOSIMETRY; HEAT TREATMENT; HYDROGEN BONDS; ION IMPLANTATION; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; RELAXATION PROCESSES; SILICON ON INSULATOR TECHNOLOGY;

DEFOLIATION; HYDROGEN VACCANCIES; PLATELETS; VOIDS;

SILICON;

EID: 21144439197     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/22/019     Document Type: Article

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