Fabrication and characterisation of 200 mm germanium-on-insulator (GeOI) substrates made from bulk germanium

Electronics Letters

Volumn 42, Issue 7, 2006, Pages 415-417

  Deguet, C ^a   Sanchez, L ^a   Akatsu, T ^b   Allibert, F ^b   Dechamp, J ^a   Madeira, F ^a   Mazen, F ^a   Tauzin, A ^a   Loup, V ^a   Richtarch, C ^b   Mercier, D ^b   Signamarcheix, T ^b   Letertre, F ^b   Depuydt, B ^c   Kernevez, N ^a  

^a CEA LETI   (France)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

^c UMICORE   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; GERMANIUM; INTEGRATED CIRCUITS; MEASUREMENT THEORY; ROUGHNESS MEASUREMENT; SILICON WAFERS;

BULK GERMANIUM; DEFECTIVITY EVALUATION; DONOR WAFERS; GERMANIUM-ON-INSULATOR (GEOI);

ELECTRIC INSULATORS;

EID: 33750200098     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20060208     Document Type: Article

References (8)

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