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Volumn 22, Issue 3, 2004, Pages 989-992

Formation and blistering of GaAsN nanostructure layers

Author keywords

[No Author keywords available]

Indexed keywords

BUBBLES (IN FLUIDS); COALESCENCE; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; NITROGEN; PHOTOLUMINESCENCE; PRESSURE EFFECTS; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SURFACE PHENOMENA; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 3242693489     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1715030     Document Type: Article
Times cited : (10)

References (23)
  • 4
    • 0029637854 scopus 로고    scopus 로고
    • M. Bruel, Electron. Lett. 31, 1201 (1995); Mater. Res. Bull. 23, 35 (1998).
    • (1995) Electron. Lett. , vol.31 , pp. 1201
    • Bruel, M.1
  • 5
    • 0029637854 scopus 로고    scopus 로고
    • M. Bruel, Electron. Lett. 31, 1201 (1995); Mater. Res. Bull. 23, 35 (1998).
    • (1998) Mater. Res. Bull. , vol.23 , pp. 35
  • 18
    • 3242686801 scopus 로고
    • edited by F. Chernow, J. A. Borders, and D. K. Brice (Plenum, New York)
    • D. V. Morgan and P. D. Taylor, in Ion Implantation in Semiconductors 1976, edited by F. Chernow, J. A. Borders, and D. K. Brice (Plenum, New York, 1977), p. 557.
    • (1977) Ion Implantation in Semiconductors 1976 , pp. 557
    • Morgan, D.V.1    Taylor, P.D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.