Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy

Journal of Applied Physics

Volumn 103, Issue 10, 2008, Pages

  Tanoto, H ^a   Yoon, S F ^a,b   Loke, W K ^a   Chen, K P ^a,b   Fitzgerald, E A ^b,c   Dohrman, C ^c   Narayanan, B ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SINGAPORE MIT ALLIANCE   (Singapore)

^c Massachusetts Institute of Technology   (United States)

^d INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MONOLAYERS; SURFACE ROUGHNESS;

MIGRATION ENHANCED EPITAXY; SURFACE PLANARITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 44649150181     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2921835     Document Type: Article

References (16)

1. Y. Horikoshi, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/8/6/010 8, 1032 (1993).
2. H. Tanoto, S. F. Yoon, W. K. Loke, E. A. Fitzgerald, C. Dohrman, B. Narayanan, M. T. Doan, and C. H. Tung, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.2151220 24, 152 (2006).
3. W. Li, S. Laaksonen, J. Haapamaa, and M. Pessa, J. Cryst. Growth 104, 227 (2001). 0022-0248
4. R. M. Sieg, S. A. Ringel, S. M. Ting, S. B. Samavedam, M. Currie, T. Langdo, and E. A. Fitzgerald, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.589968 16, 1471 (1998).
5. R. M. Sieg, S. A. Ringel, S. M. Ting, E. A. Fitzgerald, and R. N. Sacks, J. Electron. Mater. 0361-5235 10.1007/s11664-998-0116-1 27, 900 (1998).
6. V. Swaminathan and A. T. Macrander, Materials Aspects of GaAs and InP Based Structures (Prentice-Hall, Englewood Cliffs, NJ, 1991).
7. K. Uesugi, N. Morooka, and I. Suemune, Appl. Phys. Lett. 0003-6951 10.1063/1.123516 74, 1254 (1999).
8. W. G. Bi, F. Deng, S. S. Lau, and C. W. Tu, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.588155 13, 754 (1995).
9. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
10. T. Sudersena Rao, K. Nozawa, and Y. Horikoshi, Appl. Phys. Lett. 0003-6951 10.1063/1.109355 62, 154 (1993).
11. H. Yamaguchi, M. Kawashima, and Y. Horikoshi, Appl. Surf. Sci. 33-34, 406 (1988). 0169-4332
12. R. D. Bringans, R. I. G. Uhrberg, R. Z. Bachrach, and J. E. Northrup, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.55.533 55, 533 (1985).
13. M. E. Gonzalez-Mendez, Phys. Status Solidi B 0370-1972 10.1002/1521-3951(200007)220:1<79::AID-PSSB79>3.0.CO;2-C 220, 79 (2000).
14. B. Bartenlian, R. Bisaro, J. Olivier, J. P. Hirtz, M. Pitaval, J. Meddeb, and A. Rocher, Appl. Surf. Sci. 56-58, 589 (1992). 0378-5963
15. J. Y. Marzin, M. N. Charasee, and B. Sermange, Phys. Rev. B 0163-1829 10.1103/PhysRevB.31.8298 31, 8298 (1985).
16. G. Ji, D. Huang, U. K. Reddy, T. S. Henderson, R. Houdŕ, and H. Morko̧, J. Appl. Phys. 0021-8979 10.1063/1.339299 62, 3366 (1987).