Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

Applied Physics Letters

Volumn 83, Issue 17, 2003, Pages 3516-3518

  Nakaharai, Shu ^a   Tezuka, Tsutomu ^a   Sugiyama, Naoharu ^a   Moriyama, Yoshihiko ^a   Takagi, Shin Ichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CONDENSATION; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; MOSFET DEVICES; RAMAN SPECTROSCOPY; SILICON WAFERS; SINGLE CRYSTALS; SURFACE ROUGHNESS; THERMOOXIDATION;

SUBBAND MODULATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0242498422     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1622442     Document Type: Article

References (12)

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