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Volumn 97, Issue 8, 2005, Pages

Mechanism of the smart cut™ layer transfer in silicon by hydrogen and helium coimplantation in the medium dose range

Author keywords

[No Author keywords available]

Indexed keywords

COIMPLANTATION; CRYSTAL QUALITY; SI LAYER; SPLITTING KINETICS;

EID: 21444459082     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1865318     Document Type: Article
Times cited : (27)

References (22)
  • 6
    • 0142154782 scopus 로고    scopus 로고
    • Proceedings of the 2003 IEEE International SOI Conference, Newport Beach, CA, 29 September 2003 (IEEE, Piscataway, NJ
    • P. Nguyen, I. Cayrefourcq, B. Blondeau, N. Sousbie, C. Lagahe-Blanchard, S. Sartori, and A.-M. Cartier, Proceedings of the 2003 IEEE International SOI Conference, Newport Beach, CA, 29 September 2003 (IEEE, Piscataway, NJ, 2003), p. 132.
    • (2003) , pp. 132
    • Nguyen, P.1    Cayrefourcq, I.2    Blondeau, B.3    Sousbie, N.4    Lagahe-Blanchard, C.5    Sartori, S.6    Cartier, A.-M.7
  • 7
    • 0142154802 scopus 로고    scopus 로고
    • Proceedings of the 2003 IEEE International SOI Conference, Newport Beach, CA, 29 September 2003 (IEEE, Piscataway, NJ
    • F. Brunier, O. Rayssac, I. Cayrefourcq, H. Oka, T. Sato, F. Fournel, and C. Lagahe, Proceedings of the 2003 IEEE International SOI Conference, Newport Beach, CA, 29 September 2003 (IEEE, Piscataway, NJ, 2003), p. 59.
    • (2003) , pp. 59
    • Brunier, F.1    Rayssac, O.2    Cayrefourcq, I.3    Oka, H.4    Sato, T.5    Fournel, F.6    Lagahe, C.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.