Prospects for rare earth doped GaN lasers on Si

Materials Today

Volumn 10, Issue 7-8, 2007, Pages 20-27

  Steckl, Andrew J ^a   Park, Jeong Ho ^a   Zavada, John M ^b  

^a University of Cincinnati   (United States)

^b U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); EPITAXIAL GROWTH; GALLIUM NITRIDE; PHOTONICS; PUMPING (LASER); RARE EARTH ELEMENTS; WAVELENGTH;

GAN:RARE EARTH ELEMENT LASERS; LASER PERFORMANCE; NEAR-INFRARED (IR) RANGE; RESEARCH ACTIVITY;

SEMICONDUCTOR LASERS;

EID: 34250205539     PISSN: 13697021     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-7021(07)70176-1     Document Type: Review

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