Mechanisms of ion-induced GaN thin layer splitting

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 8-9, 2009, Pages 1264-1268

  Moutanabbir, O ^a   Chabal, Y J ^b   Chicoine, M ^c   Christiansen, S ^a   Krause Rehberg, R ^d   Schiettekatte, F ^c   Scholz, R ^a   Seitz, O ^b   Senz, S ^a   Susskraut F ^d   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b The University of Texas at Dallas   (United States)

^c UNIVERSITÉ DE MONTRÉAL   (Canada)

^d MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

Blistering; GaN; Ion implantation; Ion cut; Vacancy complexes; Voids

Indexed keywords

BLISTERING; GAN; ION-CUT; VACANCY COMPLEXES; VOIDS;

FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; ION BOMBARDMENT; ION IMPLANTATION; MOLECULAR SPECTROSCOPY; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY; SEMICONDUCTING GALLIUM; SPECTROSCOPIC ANALYSIS; VACANCIES;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 65349139410     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.01.028     Document Type: Article

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