Raman-scattering elucidation of the giant Isotope effect in hydrogen-Ion blistering of silicon

Journal of Chemical Physics

Volumn 121, Issue 16, 2004, Pages 7973-7986

  Moutanabbir, O ^a   Terreault, B ^a  

^a INRS EMT   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; ATOMIC FORCE MICROSCOPY; DESORPTION; DEUTERIUM; GAS LASERS; HYDROGEN; INTERFACES (MATERIALS); ION IMPLANTATION; LUMINESCENCE; MOLECULAR VIBRATIONS; NUCLEATION; RADIATION DAMAGE; RAMAN SPECTROSCOPY; SURFACE TOPOGRAPHY;

BLISTERING; ISOTOPE EFFECTS; MICROCAVITIES; ROOM TEMPERATURE (RT) IMPLANTATIONS;

SEMICONDUCTING SILICON;

EID: 8344228539     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1794571     Document Type: Article

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