Effects of hydrogen implantation temperature on InP surface blistering

Applied Physics Letters

Volumn 92, Issue 20, 2008, Pages

  Chen, Peng ^a   Di, Zengfeng ^b   Nastasi, M ^b   Bruno, Elena ^c   Grimaldi, Maria Grazia ^c   Theodore, N David ^d   Lau, S S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CATANIA   (Italy)

^d FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; NUCLEATION; POINT DEFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SURFACE ANALYSIS; X RAY DIFFRACTION;

ELASTIC RECOIL DETECTION; HYDROGEN IMPLANTATION; HYDROGEN TRAPPING; ION INDUCED DAMAGE; LAYER EXFOLIATION; SURFACE BLISTERING;

INDIUM PHOSPHIDE;

EID: 44349188577     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2926682     Document Type: Article

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