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Volumn 90, Issue 5, 2007, Pages

Double-flip transfer of indium phosphide layers via adhesive wafer bonding and ion-cutting process

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; ELECTRIC PROPERTIES; ION IMPLANTATION; SILICON WAFERS; WSI CIRCUITS;

EID: 33847003329     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2450665     Document Type: Article
Times cited : (8)

References (18)
  • 3
    • 16244416502 scopus 로고    scopus 로고
    • 2004 IEEE SOI Conference, October 2004 (IEEE, New York, NY
    • S. K. Kim, L. Xue, and S. Tiwari, 2004 IEEE SOI Conference, October 2004 (IEEE, New York, NY, 2004), pp. 136-138.
    • (2004) , pp. 136-138
    • Kim, S.K.1    Xue, L.2    Tiwari, S.3
  • 8
    • 84945911066 scopus 로고    scopus 로고
    • 2003 DTIP Conference, May 2003 (DTIP, Mandelieu-La Napole, France
    • G. Hong, A. Holmes, and M. Heaton, 2003 DTIP Conference, May 2003 (DTIP, Mandelieu-La Napole, France, 2003), pp. 268-271.
    • (2003) , pp. 268-271
    • Hong, G.1    Holmes, A.2    Heaton, M.3
  • 11
    • 23744442727 scopus 로고    scopus 로고
    • 2004 Inter-national Conference on Indium Phosphide and Related Materials, Kagoshima, Japan, 31 May-4 June 2004 (IEEE, New York
    • S. Hayashi, M. S. Goorsky, R. Sandhu, and M. Wojtwicz, 2004 Inter-national Conference on Indium Phosphide and Related Materials, Kagoshima, Japan, 31 May-4 June 2004 (IEEE, New York, 2004), pp. 358-361.
    • (2004) , pp. 358-361
    • Hayashi, S.1    Goorsky, M.S.2    Sandhu, R.3    Wojtwicz, M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.