Low temperature InP/Si wafer bonding

Applied Physics Letters

Volumn 84, Issue 5, 2004, Pages 732-734

  Tong, Q Y ^a   Gan, Q ^a,b   Hudson, G ^a   Fountain, G ^a   Enquist, P ^a  

^a Ziptronix Inc   (United States)

^b RTI INTERNATIONAL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING ENERGY; COVALENT BONDING;

ABSORPTION; AMORPHOUS MATERIALS; ANNEALING; CRYSTALLINE MATERIALS; ETCHING; IMAGING SYSTEMS; PASSIVATION; PLASMA THEORY; SILICON WAFERS;

INDIUM COMPOUNDS;

EID: 1242309295     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1644615     Document Type: Article

References (10)

1. M. Bruel, Electron. Lett. 31, 1201 (1995).
2. T. Akatsu, A. Ploessl, R. Scholz, H. Stenzel, and U. Goesele, J. Appl. Phys. 90, 3856 (2001).
3. M. M. R. Howlader, T. Watanabe, and T. Suga, J. Appl. Phys. 91, 3062 (2002).
4. F. Ericson, S. Johansson, and J. Schweitz, Mater. Sci. Eng., A 105/106, 131 (1988).
5. J. F. Ziegier, J. B. Biersack, and U. Littmark, The Stopping and Range of Ions in Solid (Pergamon, New York, 1985).
6. Q.-Y. Tong, R. Scholtz, U. Goesele, T.-H. Lee, L.-J. Huang, Y.-L. Chao, and T. Y. Tan, Appl. Phys. Lett. 72, 49 (1998).
7. S. J. Pearton, J. W. Corbett, and T. S. Shi, Appl. Phys. A: Solids Surf. A43, 153 (1987).
8. J. I. Penkove, P. J. Zanzucchi, C. W. Magee, and Lucovsky, Appl. Phys. Lett. 46, 421 (1985).
9. H. Kim, G. Glass, S. Y. Park, T. Spila, N. Taylor, J. R. Abelson, and J. E. Greene, Appl. Phys. Lett. 69, 3869 (1996).
10. C. G. Van der Walle, Phys. Rev. B 49, 4579 (1994).