Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 75, Issue 7, 2007, Pages

  Moutanabbir, O ^a,d   Terreault, B ^a   Chicoine, M ^b   Schiettekatte, F ^b   Simpson, P J ^c  

^a INRS EMT   (Canada)

^b UNIVERSITÉ DE MONTRÉAL   (Canada)

^c UNIVERSITY OF WESTERN ONTARIO   (Canada)

^d MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33846696383     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.75.075201     Document Type: Article

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