Microstructural evolution in H ion induced splitting of freestanding GaN

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Moutanabbir, O ^a   Scholz, R ^a   Senz, S ^a   Gosele U ^a   Chicoine, M ^b   Schiettekatte, F ^b   Susskraut F ^c   Krause Rehberg, R ^c  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b UNIVERSITÉ DE MONTRÉAL   (Canada)

^c MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE; HYDROGEN; IONS; MICROSTRUCTURAL EVOLUTION; NONMETALS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS;

AMERICAN INSTITUTE OF PHYSICS (AIP); CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (X TEM); DECHANNELING; EVOLUTION (CO); HIGH-DENSITY; HYDROGEN IONS; IMPLANTED REGION; INTERNAL SURFACES; ION CHANNELING; LATTICE DISTORTIONS; MICRO STRUCTURAL; MICROSTRUCTURAL TRANSFORMATIONS; NANOBUBBLES; SPECTROSCOPY DATA; TEMPERATURE RANGES; THIN LAYERING; VACANCY CLUSTERING;

SEMICONDUCTING GALLIUM;

EID: 48249104800     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2955832     Document Type: Article

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