Characteristics of germanium-on-insulators fabricated by wafer bonding and hydrogen-induced layer splitting

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 11, 2006, Pages 8565-8570

  Chao, Yu Lin ^a   Scholz, Roland ^b   Reiche, Manfred ^b   Gösele, Ulrich ^b   Woo, Jason C S ^a  

^a Department of Civil and Environmental Engineering   (United States)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Dopant diffusion; Germanium on insulator; Hydrogen in germanium; Wafer bonding

Indexed keywords

DOPING (ADDITIVES); ELECTRIC INSULATORS; HYDROGEN; ION IMPLANTATION; MOLECULAR STRUCTURE; WAFER BONDING;

DOPANT DIFFUSION; GERMANIUM-ON-INSULATOR; HYDROGEN IN GERMANIUM; HYDROGEN-INDUCED LAYER SPLITTING;

SEMICONDUCTING GERMANIUM;

EID: 34547891080     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.8565     Document Type: Article

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