Physical mechanisms behind the ion-cut in hydrogen implanted silicon

Journal of Applied Physics

Volumn 92, Issue 5, 2002, Pages 2335-2342

  Hochbauer T ^a   Misra, A ^a   Nastasi, M ^a   Mayer, J W ^b  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CLEAVAGE MECHANISM; ELASTIC RECOIL DETECTION ANALYSIS; IMPLANTATION DOSE; IMPLANTATION PROCESS; IN-PLANE STRESS; ION CUTTING; ION DOSE; ION-CUT; LASER SCANNING; LATTICE DAMAGE; MECHANICAL STRESS; OUT-OF-PLANE; PHYSICAL MECHANISM; SILICON SAMPLES;

ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRON MICROSCOPY; FRACTURE MECHANICS; HYDROGEN; IONS; STRESSES;

SILICON WAFERS;

EID: 84860068962     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1494844     Document Type: Article

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