Low temperature InP layer transfer

Electronics Letters

Volumn 35, Issue 4, 1999, Pages 341-342

  Tong, Q Y ^a   Chao, Y L ^a   Huang, L J ^a   Gosele U ^a,b  

^a DUKE UNIVERSITY   (United States)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042629472     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990226     Document Type: Article

References (9)

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3. JALAGUIER, E., ASPAR, B., POCAS, S., MICHAUD, J.F., ZUSSY, M., PAPON, A.M., and BRUEL, M.: 'Transfer of three-inch GaAs film on silicon substrate by proton implantation process', Electron. Lett., 1998, 34, pp. 408-409
4. PEARTON. S.J.: 'Ion implantation in GaAs', Solid State Phenomena, 1988, 1&2, pp. 247-280
5. FREUND, L.B.: 'A lower bound on implant density to induce wafer splitting in forming compliant substrate structures', Appl. Phys. Lett., 1997, 70, pp. 3519
6. TONG, Q.-Y., HUANG, L.-J., CHAO, Y.-L., SCHOLZ, R., and GÖSELE, U.: 'Effect of wafer temperature during H implantation on blistering of monocrystalline materials', submitted to Appl. Phys. Lett.
7. GÖSELE, U., and TONG, Q.-Y.: US Patent application 09/163,897
8. BRUEL, M., ASPAR, B., MALEVILLE, C., MORICEAU, H., AUBERTON-HERVE, A., and BARGE, T.: 'Unibond SOI wafers achieved by Smart-Cut process'. Proc. 8th Int. Symp. Silicon-on-Insulator Techn. & Devices, 1997, (The Electrochem. Society), Paper PV 97-23, p. 3-14
9. 2 bonding'. Submitted to MRS Spring Meeting, 1999