III-V and III-nitride engineered heterostructures: Wafer bonding, ion slicing and more

ECS Transactions

Volumn 16, Issue 8, 2009, Pages 251-262

  Moutanabbir, O ^a   Christiansen, S ^a   Senz, S ^a   Scholz, R ^a   Petzold, M ^b   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; GALLIUM NITRIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; IONS; SAPPHIRE; SEMICONDUCTING INDIUM PHOSPHIDE; SILICA; SILICON WAFERS; WIDE BAND GAP SEMICONDUCTORS;

EXPERIMENTAL TECHNIQUES; FLEXIBLE TECHNOLOGIES; FREESTANDING GAN; HIGH TEMPERATURE PROCESS; NOVEL STRATEGIES; POST-IMPLANTATION; SIO2 INTERLAYERS; STRUCTURAL TRANSFORMATION;

WAFER BONDING;

EID: 60449113150     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2982876     Document Type: Conference Paper

References (20)

1. M. Bruel, Eletron. Lett. 31, 1201 (1995)
2. Q.-Y. Tong and U. Gösele, Semiconductor Wafer Bonding: Science and Technology, The Electrochemical Society Series (Wiley-Interscience Publication, 1999).
3. A. W. Fang, H. Park, Y. -H. Kuo, R. Jones, O. Cohen, D. Liang, O. Raday, M. N. Sysak, M. J. Paniccia, and J. E. Bowers, Mat. Today 10, 28 (2007).
4. J. M. Zahler, K. Tanabe, C. ladous, T. Pinnington, F. D. Newman, H. A. Atwater, Appl. Phys. Lett. 91, 012108 (2007).
5. Q. -Y. Tong, Y. -L. Chao, L. -J. Huang, and U. Gösele, Electron. Lett. 35, 341 (1999).
6. E. Jalaguier, B. Aspar, S. Pocas, J. F. Michaud, A. M. Papon, and M. Bruel, Proc. 11th Int. Conf. On InP and related materials, p26 1998 (Piscataway, NJ : IEEE).
7. S. Hayashi, D. Bruno, and M. S. Goorsky, Appl. Phys. Lett. 85, 236 (2004).
8. R. Singh, I. Radu, R. Scholz, C. Himcinschi, U. Gosele, and S. H. Christiansen, Semicond. Sci. Technol. 21, 1311 (2006).
9. M. Alexe, V. Dragoi, M. Reiche, and U. Gösele, Electron. Lett. 36, 677 (2000).
10. S. Nakamura and G. Fasol, The blue Laser Diode: GaN Based Light Emitters and Lasers (Springer, Berlin, 1997).
11. O. Moutanabbir, R. Scholz, S. Christiansen, U. Gösele, M. Chicoine, R. Krause-Rehberg, and Y. J. Chabal, MRS Spring Meeting: Symposium C, March 24-28, 2008.
12. R. Singh, I. Radu, G. Bruederl, C. Eichler, V. Haerle, U. Gösele, and S. H. Christiansen, Semicond. Sci. Technol. 22, 418 (2007).
13. O. Moutanabbir, R. Scholz, S. Senz, U. Gösele, M. Chicoine, F. Schiettekatte, F. SuUßkraut, and R. Krause-Rehberg, Appl. Phys. Lett. 93, 031916 (2008).
14. Y. Suprun-Belevich, F. Cristiano, A. Nejin, P. L. F. Hemment, and B. Sealy, Nucl. Instrum. Methods Phys. Res. B 140, 91 (1998).
15. J. Chen and I. D. Wolf, Semicond. Sci. Technol. 18, 261 (2003).
16. O. Moutanabbir and U. Gösele, to be published.
17. For a recent review, see: B. Terreault, phys. stat. sol. (a) 204, 2129 (2007).
18. S. O. Kucheyev, J. S. Williams, C. Jagadish. J. Zou, and G. Li, J. Appl. Phys. 91, 3928 (2001).
19. J. F. Ziegler, J. B. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985): www.srim.org.
20. O. Moutanabbir, B. Terreault, M. Chicoine, F. Schiettekatte, and P. J. Simpson, Phys. Rev. B 75, 075201 (2007).