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Volumn 203, Issue 17-18, 2009, Pages 2375-2379
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Blistering kinetics of GaN by hydrogen implantation at high temperature
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Author keywords
Blistering kinetics; GaN epi wafer; Hydrogen implantation
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Indexed keywords
ASSOCIATED MECHANISMS;
BLISTERING KINETICS;
BLISTERING PROCESS;
CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPIES;
FIELD EMISSION-SCANNING ELECTRON MICROSCOPIES;
FLUENCE;
FLUENCES;
GAN EPI-WAFER;
GAN FILMS;
HIGH RESOLUTION X-RAY DIFFRACTIONS;
HIGH TEMPERATURES;
HYDROGEN IMPLANTATION;
HYDROGEN ION IMPLANTATIONS;
HYDROGEN IONS;
IMPLANT TEMPERATURES;
IMPLANTATION TEMPERATURES;
ION FLUENCE;
ION-CUT PROCESS;
LOW-TEMPERATURE ANNEALING;
OPTIMUM CONDITIONS;
POST-IMPLANTATION ANNEALING;
ROOM TEMPERATURES;
RUTHERFORD BACKSCATTERINGS;
SPLITTING KINETICS;
SURFACE BLISTERING;
TEMPERATURE RANGES;
WURTZITE;
ACTIVATION ENERGY;
ANNEALING;
FIELD EMISSION;
FIELD EMISSION MICROSCOPES;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
HYDROGEN;
ION BOMBARDMENT;
ION IMPLANTATION;
IONS;
OPTICAL MICROSCOPY;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING GALLIUM;
ZINC SULFIDE;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
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EID: 67349091267
PISSN: 02578972
EISSN: None
Source Type: Journal
DOI: 10.1016/j.surfcoat.2009.02.024 Document Type: Article |
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Times cited : (13)
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References (10)
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